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Interface states and P
b
defects at the Si(100)/HfO
2
interface
P. K. Hurley
, B. J. O'Sullivan
, V. V. Afanas'ev
, A. Stesmans
Tyndall
Tyndall MicroNano Systems
Tyndall Photonics
School of Chemistry
University College Cork
KU Leuven
Research output
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peer-review
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b
defects at the Si(100)/HfO
2
interface'. Together they form a unique fingerprint.
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Chemistry
Electron Spin
100%
Conductance
100%
Interface State
100%
Silicon
50%
Metallorganic Chemical Vapor Deposition
50%
ESR Spectrum
50%
Density of Interface States
50%
Material Science
Density
100%
Electron Paramagnetic Resonance Spectroscopy
75%
Capacitance
50%
Silicon
25%
Boron
25%
Chemical Vapor Deposition
25%
Defect Density
25%
Engineering
Interface State
100%
Vapor Deposition
50%
Chemical Vapor Deposition
50%
Defect Density
50%
Strong Inversion
50%
Physics
Interface State
100%