Interfacial water intercalation-induced metal-insulator transition in NbS 2 /BN heterostructure

  • Rui Xu
  • , Xinsheng Wang
  • , Zhiyue Zheng
  • , Shili Ye
  • , Kunqi Xu
  • , Le Lei
  • , Sabir Hussain
  • , Fei Pang
  • , Xinmeng Liu
  • , Yan Jun Li
  • , Yasuhiro Sugawara
  • , Wei Ji
  • , Liming Xie
  • , Zhihai Cheng

Research output: Contribution to journalArticlepeer-review

Abstract

Interfacial engineering, such as molecule intercalation, can modify properties and optimize performance of van der Waals heterostructures and their devices. Here, we investigated the pristine and water molecule intercalated heterointerface of niobium disulphide (NbS 2 ) on hexagonal boron nitride (h-BN) (NbS 2 /BN) using advanced atomic force microscopy (AFM), and observed the metal-insulator transition (MIT) of first layer (1L-) of NbS 2 induced by water molecule intercalation. In pristine sample, interfacial charge transfers were confirmed by the direct detection of trapped static charges at the post-exposed h-BN surface, produced by mechanically peeling off the 1L-NbS 2 from the substrate. The interfacial charge transfers facilitate the intercalation of water molecules at the heterointerface. The intercalated water layers make a MIT of 1L-NbS 2 , while the pristine metallic state of the following NbS 2 layers remains preserved. This work is of great significance to help understand the interfacial properties of 2D metal/insulator heterostructures and can pave the way for further preparation of an ultrathin transistor.

Original languageEnglish
Article number205702
JournalNanotechnology
Volume30
Issue number20
DOIs
Publication statusPublished - 11 Mar 2019
Externally publishedYes

Keywords

  • 2D material
  • electrostatic force microscopy
  • interfacial intercalation
  • metal-insulator transition
  • van der Waals heterointerface

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