Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix

E. V. Lutsenko; A. L. Gurskii; V. N. Pavlovskii; V. Z. Zubialevich; G. P. Yablonskii; I. V. Sedova; S. V. Sorokin; A. A. Toropov; S. V. Ivanov; P. S. Kop'Ev

doi:10.1002/pssc.200564742

Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix

E. V. Lutsenko
, A. L. Gurskii
, V. N. Pavlovskii
, V. Z. Zubialevich
, G. P. Yablonskii
, I. V. Sedova
, S. V. Sorokin
, A. A. Toropov
, S. V. Ivanov
, P. S. Kop'Ev

Research output: Contribution to journal › Article › peer-review

Abstract

Photoluminescence (PL), PL excitation (PLE) spectra as well as internal laser characteristics of CdSe quantum dots (QDs) in ZnSe matrix grown by molecular beam epitaxy (MBE) and multi-cycle migration enhanced epitaxy (MEE) were investigated. The peak PL intensity of the CdSe QDs grown by MEE in an asymmetric waveguide is by one order of magnitude more than that of the CdSe QDs grown by MBE in a symmetric waveguide. As a result, the laser characteristics have been significantly improved. The internal laser parameters were estimated to be: ΓG₀ ∼ 66 cm^-1, η_i ∼ 13-17 %, α_i ∼ 5-15 cm^-1 for MBE CdSe QDs and ΓG₀ ∼ 69 cm^-1, η_i ∼ 42%, α_i ∼ 2-10 cm^-1 for MEE CdSe QDs.

Original language	English
Pages (from-to)	1233-1237
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200564742
Publication status	Published - 2006
Externally published	Yes
Event	12th International Conference on II-VI Compounds - Warsaw, Poland Duration: 12 Sep 2005 → 16 Sep 2005

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@article{d3c1ac11a7c24e2d9bc5782c72ed488c,

title = "Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix",

abstract = "Photoluminescence (PL), PL excitation (PLE) spectra as well as internal laser characteristics of CdSe quantum dots (QDs) in ZnSe matrix grown by molecular beam epitaxy (MBE) and multi-cycle migration enhanced epitaxy (MEE) were investigated. The peak PL intensity of the CdSe QDs grown by MEE in an asymmetric waveguide is by one order of magnitude more than that of the CdSe QDs grown by MBE in a symmetric waveguide. As a result, the laser characteristics have been significantly improved. The internal laser parameters were estimated to be: ΓG0 ∼ 66 cm-1, ηi ∼ 13-17 \%, αi ∼ 5-15 cm-1 for MBE CdSe QDs and ΓG0 ∼ 69 cm-1, ηi ∼ 42\%, αi ∼ 2-10 cm-1 for MEE CdSe QDs.",

author = "Lutsenko, \{E. V.\} and Gurskii, \{A. L.\} and Pavlovskii, \{V. N.\} and Zubialevich, \{V. Z.\} and Yablonskii, \{G. P.\} and Sedova, \{I. V.\} and Sorokin, \{S. V.\} and Toropov, \{A. A.\} and Ivanov, \{S. V.\} and Kop'Ev, \{P. S.\}",

year = "2006",

doi = "10.1002/pssc.200564742",

language = "English",

volume = "3",

pages = "1233--1237",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "4",

note = "12th International Conference on II-VI Compounds ; Conference date: 12-09-2005 Through 16-09-2005",

}

TY - JOUR

T1 - Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix

AU - Lutsenko, E. V.

AU - Gurskii, A. L.

AU - Pavlovskii, V. N.

AU - Zubialevich, V. Z.

AU - Yablonskii, G. P.

AU - Sedova, I. V.

AU - Sorokin, S. V.

AU - Toropov, A. A.

AU - Ivanov, S. V.

AU - Kop'Ev, P. S.

PY - 2006

Y1 - 2006

N2 - Photoluminescence (PL), PL excitation (PLE) spectra as well as internal laser characteristics of CdSe quantum dots (QDs) in ZnSe matrix grown by molecular beam epitaxy (MBE) and multi-cycle migration enhanced epitaxy (MEE) were investigated. The peak PL intensity of the CdSe QDs grown by MEE in an asymmetric waveguide is by one order of magnitude more than that of the CdSe QDs grown by MBE in a symmetric waveguide. As a result, the laser characteristics have been significantly improved. The internal laser parameters were estimated to be: ΓG0 ∼ 66 cm-1, ηi ∼ 13-17 %, αi ∼ 5-15 cm-1 for MBE CdSe QDs and ΓG0 ∼ 69 cm-1, ηi ∼ 42%, αi ∼ 2-10 cm-1 for MEE CdSe QDs.

AB - Photoluminescence (PL), PL excitation (PLE) spectra as well as internal laser characteristics of CdSe quantum dots (QDs) in ZnSe matrix grown by molecular beam epitaxy (MBE) and multi-cycle migration enhanced epitaxy (MEE) were investigated. The peak PL intensity of the CdSe QDs grown by MEE in an asymmetric waveguide is by one order of magnitude more than that of the CdSe QDs grown by MBE in a symmetric waveguide. As a result, the laser characteristics have been significantly improved. The internal laser parameters were estimated to be: ΓG0 ∼ 66 cm-1, ηi ∼ 13-17 %, αi ∼ 5-15 cm-1 for MBE CdSe QDs and ΓG0 ∼ 69 cm-1, ηi ∼ 42%, αi ∼ 2-10 cm-1 for MEE CdSe QDs.

UR - https://www.scopus.com/pages/publications/33646166101

U2 - 10.1002/pssc.200564742

DO - 10.1002/pssc.200564742

M3 - Article

AN - SCOPUS:33646166101

SN - 1610-1634

VL - 3

SP - 1233

EP - 1237

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 4

T2 - 12th International Conference on II-VI Compounds

Y2 - 12 September 2005 through 16 September 2005

ER -

Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix

Abstract

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