Internal temperature distribution measurements in high power semiconductor lasers

P. O'Brien; J. O'Callaghan; J. McInerney

doi:10.1049/el:19981004

Internal temperature distribution measurements in high power semiconductor lasers

P. O'Brien
, J. O'Callaghan
, J. McInerney

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A novel technique to measure internal temperature distributions within high power semiconductor lasers with substrates transparent to the laser radiation is presented. The temperature resolution is better than 10°C with a spatial resolution of 1-2μm. The results show highly non-uniform transverse temperature distributions and significant heating close to the facet at high output powers.

Original language	English
Pages (from-to)	1399-1401
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	14
DOIs	https://doi.org/10.1049/el:19981004
Publication status	Published - 9 Jul 1998

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10.1049/el:19981004

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title = "Internal temperature distribution measurements in high power semiconductor lasers",

abstract = "A novel technique to measure internal temperature distributions within high power semiconductor lasers with substrates transparent to the laser radiation is presented. The temperature resolution is better than 10°C with a spatial resolution of 1-2μm. The results show highly non-uniform transverse temperature distributions and significant heating close to the facet at high output powers.",

author = "P. O'Brien and J. O'Callaghan and J. McInerney",

year = "1998",

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doi = "10.1049/el:19981004",

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journal = "Electronics Letters",

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T1 - Internal temperature distribution measurements in high power semiconductor lasers

AU - O'Brien, P.

AU - O'Callaghan, J.

AU - McInerney, J.

PY - 1998/7/9

Y1 - 1998/7/9

N2 - A novel technique to measure internal temperature distributions within high power semiconductor lasers with substrates transparent to the laser radiation is presented. The temperature resolution is better than 10°C with a spatial resolution of 1-2μm. The results show highly non-uniform transverse temperature distributions and significant heating close to the facet at high output powers.

AB - A novel technique to measure internal temperature distributions within high power semiconductor lasers with substrates transparent to the laser radiation is presented. The temperature resolution is better than 10°C with a spatial resolution of 1-2μm. The results show highly non-uniform transverse temperature distributions and significant heating close to the facet at high output powers.

UR - https://www.scopus.com/pages/publications/0032120328

U2 - 10.1049/el:19981004

DO - 10.1049/el:19981004

M3 - Article

AN - SCOPUS:0032120328

SN - 0013-5194

VL - 34

SP - 1399

EP - 1401

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Internal temperature distribution measurements in high power semiconductor lasers

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