Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs: Impact on high-power device performance potential

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@article{dc3c781f4f784db58a93b60decb2892c,

title = "Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs: Impact on high-power device performance potential",

author = "Badal Mondal and Pietro Pampili and Jayjit Mukherjee and David Moran and Parbrook, \{Peter James\} and Stefan Schulz",

year = "2025",

month = jun,

day = "1",

doi = "10.1063/5.0277051",

language = "English",

journal = "APL Electronic Devices",

}

TY - JOUR

T1 - Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs: Impact on high-power device performance potential

AU - Mondal, Badal

AU - Pampili, Pietro

AU - Mukherjee, Jayjit

AU - Moran, David

AU - Parbrook, Peter James

AU - Schulz, Stefan

PY - 2025/6/1

Y1 - 2025/6/1

UR - https://doi.org/10.1063/5.0277051

U2 - 10.1063/5.0277051

DO - 10.1063/5.0277051

M3 - Article

JO - APL Electronic Devices

JF - APL Electronic Devices

ER -