Intradot dynamics of InAs quantum dot based electroabsorbers

Tomasz Piwonski; Jaroslaw Pulka; Gillian Madden; Guillaume Huyet; John Houlihan; Evgeny A. Viktorov; Thomas Erneux; Paul Mandel

doi:10.1063/1.3106633

Intradot dynamics of InAs quantum dot based electroabsorbers

Tomasz Piwonski
, Jaroslaw Pulka
, Gillian Madden
, Guillaume Huyet
, John Houlihan
, Evgeny A. Viktorov
, Thomas Erneux
, Paul Mandel

Research output: Contribution to journal › Article › peer-review

Abstract

The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.

Original language	English
Article number	123504
Journal	Applied Physics Letters
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.3106633
Publication status	Published - 2009

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10.1063/1.3106633

https://hdl.handle.net/10468/4361Licence: CC BY-NC-ND

Cite this

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title = "Intradot dynamics of InAs quantum dot based electroabsorbers",

abstract = "The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.",

author = "Tomasz Piwonski and Jaroslaw Pulka and Gillian Madden and Guillaume Huyet and John Houlihan and Viktorov, \{Evgeny A.\} and Thomas Erneux and Paul Mandel",

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doi = "10.1063/1.3106633",

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journal = "Applied Physics Letters",

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AU - Piwonski, Tomasz

AU - Pulka, Jaroslaw

AU - Madden, Gillian

AU - Huyet, Guillaume

AU - Houlihan, John

AU - Viktorov, Evgeny A.

AU - Erneux, Thomas

AU - Mandel, Paul

PY - 2009

Y1 - 2009

N2 - The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.

AB - The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.

UR - https://www.scopus.com/pages/publications/63549121237

U2 - 10.1063/1.3106633

DO - 10.1063/1.3106633

M3 - Article

AN - SCOPUS:63549121237

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123504

ER -

Intradot dynamics of InAs quantum dot based electroabsorbers

Abstract

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