Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications

Weize Xiong; C. Rinn Cleavelin; Che Hua Hsu; Mike Ma; K. Schruefer; Klaus Von Armin; T. Schulz; I. Cayrefourcq; C. Mazure; P. Patruno; M. Kennard; Kyoungsub Shin; Xin Sun; Tsu Jae King Liu; K. Cherkaoui; J. P. Colinge

doi:10.1149/1.2728842

Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications

Weize Xiong
, C. Rinn Cleavelin
, Che Hua Hsu
, Mike Ma
, K. Schruefer
, Klaus Von Armin
, T. Schulz
, I. Cayrefourcq
, C. Mazure
, P. Patruno
, M. Kennard
, Kyoungsub Shin
, Xin Sun
, Tsu Jae King Liu
, K. Cherkaoui
, J. P. Colinge

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

MuGFET structure improves local transistor mismatch compared to planar bulk MOSFET. This enables further SRAM cell size reduction. GIDL current is well controlled even with a mid-gap metal gate MuGFETs have low subthreshold leakage if L_g/W_si ratio is kept above 1.5. The advantage of MuGFET subthreshold leakage suppression is even more pronounced at higher temperatures. Furthermore MuGFETs are compatible with local strain techniques to improve carrier mobility. The aforementioned qualities, along with low manufacturing cost of single mid-band-gap metal gate, make MuGFET a good candidate to replace planar bulk MOSFET for Low-Power Applications

Original language	English
Title of host publication	ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices
Publisher	Electrochemical Society Inc.
Pages	59-69
Number of pages	11
Edition	4
ISBN (Electronic)	9781566775533
ISBN (Print)	9781566775533
DOIs	https://doi.org/10.1149/1.2728842
Publication status	Published - 2007
Event	13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting - Chicago, IL, United States Duration: 6 May 2007 → 11 May 2007

Publication series

Name	ECS Transactions
Number	4
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	6/05/07 → 11/05/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2728842

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Xiong, W., Cleavelin, C. R., Hsu, C. H., Ma, M., Schruefer, K., Von Armin, K., Schulz, T., Cayrefourcq, I., Mazure, C., Patruno, P., Kennard, M., Shin, K., Sun, X., Liu, T. J. K., Cherkaoui, K., & Colinge, J. P. (2007). Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications. In ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices (4 ed., pp. 59-69). (ECS Transactions; Vol. 6, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/1.2728842

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title = "Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications",

abstract = "MuGFET structure improves local transistor mismatch compared to planar bulk MOSFET. This enables further SRAM cell size reduction. GIDL current is well controlled even with a mid-gap metal gate MuGFETs have low subthreshold leakage if Lg/Wsi ratio is kept above 1.5. The advantage of MuGFET subthreshold leakage suppression is even more pronounced at higher temperatures. Furthermore MuGFETs are compatible with local strain techniques to improve carrier mobility. The aforementioned qualities, along with low manufacturing cost of single mid-band-gap metal gate, make MuGFET a good candidate to replace planar bulk MOSFET for Low-Power Applications",

author = "Weize Xiong and Cleavelin, \{C. Rinn\} and Hsu, \{Che Hua\} and Mike Ma and K. Schruefer and \{Von Armin\}, Klaus and T. Schulz and I. Cayrefourcq and C. Mazure and P. Patruno and M. Kennard and Kyoungsub Shin and Xin Sun and Liu, \{Tsu Jae King\} and K. Cherkaoui and Colinge, \{J. P.\}",

year = "2007",

doi = "10.1149/1.2728842",

language = "English",

isbn = "9781566775533",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "59--69",

booktitle = "ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices",

address = "United States",

edition = "4",

note = "13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",

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Xiong, W, Cleavelin, CR, Hsu, CH, Ma, M, Schruefer, K, Von Armin, K, Schulz, T, Cayrefourcq, I, Mazure, C, Patruno, P, Kennard, M, Shin, K, Sun, X, Liu, TJK, Cherkaoui, K & Colinge, JP 2007, Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications. in ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices. 4 edn, ECS Transactions, no. 4, vol. 6, Electrochemical Society Inc., pp. 59-69, 13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting, Chicago, IL, United States, 6/05/07. https://doi.org/10.1149/1.2728842

Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications. / Xiong, Weize; Cleavelin, C. Rinn; Hsu, Che Hua et al.
ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices. 4. ed. Electrochemical Society Inc., 2007. p. 59-69 (ECS Transactions; Vol. 6, No. 4).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications

AU - Xiong, Weize

AU - Cleavelin, C. Rinn

AU - Hsu, Che Hua

AU - Ma, Mike

AU - Schruefer, K.

AU - Von Armin, Klaus

AU - Schulz, T.

AU - Cayrefourcq, I.

AU - Mazure, C.

AU - Patruno, P.

AU - Kennard, M.

AU - Shin, Kyoungsub

AU - Sun, Xin

AU - Liu, Tsu Jae King

AU - Cherkaoui, K.

AU - Colinge, J. P.

PY - 2007

Y1 - 2007

N2 - MuGFET structure improves local transistor mismatch compared to planar bulk MOSFET. This enables further SRAM cell size reduction. GIDL current is well controlled even with a mid-gap metal gate MuGFETs have low subthreshold leakage if Lg/Wsi ratio is kept above 1.5. The advantage of MuGFET subthreshold leakage suppression is even more pronounced at higher temperatures. Furthermore MuGFETs are compatible with local strain techniques to improve carrier mobility. The aforementioned qualities, along with low manufacturing cost of single mid-band-gap metal gate, make MuGFET a good candidate to replace planar bulk MOSFET for Low-Power Applications

AB - MuGFET structure improves local transistor mismatch compared to planar bulk MOSFET. This enables further SRAM cell size reduction. GIDL current is well controlled even with a mid-gap metal gate MuGFETs have low subthreshold leakage if Lg/Wsi ratio is kept above 1.5. The advantage of MuGFET subthreshold leakage suppression is even more pronounced at higher temperatures. Furthermore MuGFETs are compatible with local strain techniques to improve carrier mobility. The aforementioned qualities, along with low manufacturing cost of single mid-band-gap metal gate, make MuGFET a good candidate to replace planar bulk MOSFET for Low-Power Applications

UR - https://www.scopus.com/pages/publications/45249110234

U2 - 10.1149/1.2728842

DO - 10.1149/1.2728842

M3 - Chapter

AN - SCOPUS:45249110234

SN - 9781566775533

T3 - ECS Transactions

SP - 59

EP - 69

BT - ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices

PB - Electrochemical Society Inc.

T2 - 13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting

Y2 - 6 May 2007 through 11 May 2007

ER -

Intrinsic advantages of SOI multiple-gate MOSFET (MuGFET) for low power applications

Abstract

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