Inverse modelling of trapped charge in hot-carrier stressed nMOSFET

R. Duane; A. Concannon; D. McCarthy; A. Mathewson

doi:10.1109/ESSDERC.2000.194791

Inverse modelling of trapped charge in hot-carrier stressed nMOSFET

R. Duane
, A. Concannon
, D. McCarthy
, A. Mathewson

Tyndall IPES (Integrated Power)

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

A new inverse modelling technique for extracting the spatial distribution of localised interface states after hot-carrier stress is presented. This technique shows for the first time quantitative agreement between measured and simulated currents in the subthreshold and weak inversion regions of operation during stress for the full range of drain, gate and bulk biases.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE Computer Society
Pages	368-371
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194791
Publication status	Published - 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sep 2000 → 13 Sep 2000

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

Access to Document

10.1109/ESSDERC.2000.194791

Cite this

Duane, R., Concannon, A., McCarthy, D., & Mathewson, A. (2000). Inverse modelling of trapped charge in hot-carrier stressed nMOSFET. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 368-371). Article 1503721 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194791

Duane, R. ; Concannon, A. ; McCarthy, D. et al. / Inverse modelling of trapped charge in hot-carrier stressed nMOSFET. ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. editor / H. Grunbacher ; Gabriel M. Crean ; W. A. Lane ; Frank A. McCabe. IEEE Computer Society, 2000. pp. 368-371 (European Solid-State Device Research Conference).

@inproceedings{463dddd6b1ae4a598464c59554df17ee,

title = "Inverse modelling of trapped charge in hot-carrier stressed nMOSFET",

abstract = "A new inverse modelling technique for extracting the spatial distribution of localised interface states after hot-carrier stress is presented. This technique shows for the first time quantitative agreement between measured and simulated currents in the subthreshold and weak inversion regions of operation during stress for the full range of drain, gate and bulk biases.",

author = "R. Duane and A. Concannon and D. McCarthy and A. Mathewson",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

year = "2000",

doi = "10.1109/ESSDERC.2000.194791",

language = "English",

isbn = "9782863322482",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "368--371",

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booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

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Duane, R, Concannon, A, McCarthy, D & Mathewson, A 2000, Inverse modelling of trapped charge in hot-carrier stressed nMOSFET. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503721, European Solid-State Device Research Conference, IEEE Computer Society, pp. 368-371, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194791

Inverse modelling of trapped charge in hot-carrier stressed nMOSFET. / Duane, R.; Concannon, A.; McCarthy, D. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE Computer Society, 2000. p. 368-371 1503721 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - Concannon, A.

AU - McCarthy, D.

AU - Mathewson, A.

PY - 2000

Y1 - 2000

N2 - A new inverse modelling technique for extracting the spatial distribution of localised interface states after hot-carrier stress is presented. This technique shows for the first time quantitative agreement between measured and simulated currents in the subthreshold and weak inversion regions of operation during stress for the full range of drain, gate and bulk biases.

AB - A new inverse modelling technique for extracting the spatial distribution of localised interface states after hot-carrier stress is presented. This technique shows for the first time quantitative agreement between measured and simulated currents in the subthreshold and weak inversion regions of operation during stress for the full range of drain, gate and bulk biases.

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DO - 10.1109/ESSDERC.2000.194791

M3 - Conference proceeding

AN - SCOPUS:0012195168

SN - 9782863322482

T3 - European Solid-State Device Research Conference

SP - 368

EP - 371

BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

A2 - Grunbacher, H.

A2 - Crean, Gabriel M.

A2 - Lane, W. A.

A2 - McCabe, Frank A.

PB - IEEE Computer Society

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

Y2 - 11 September 2000 through 13 September 2000

ER -

Duane R, Concannon A, McCarthy D, Mathewson A. Inverse modelling of trapped charge in hot-carrier stressed nMOSFET. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society. 2000. p. 368-371. 1503721. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2000.194791

Inverse modelling of trapped charge in hot-carrier stressed nMOSFET

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