Inverse scattering method design of regrowth-free singlemode semiconductor lasers for monolithic integration

  • Kevin Shortiss
  • , Mohamad Dernaika
  • , Ludovic Caro
  • , Masoud Seifikar
  • , Frank H. Peters

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

An inverse scattering method is used to design single moded lasers, using etched depth insensitive pits as perturbations in the laser cavity. We compare 10 pit, 15 pit and 20 pit devices, and report strongly single moded lasers ( > 40dB).

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580439
DOIs
Publication statusPublished - 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2 Jul 20185 Jul 2018

Publication series

NameOptics InfoBase Conference Papers
VolumePart F101-IPRSN 2018
ISSN (Electronic)2162-2701

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Country/TerritorySwitzerland
CityZurich
Period2/07/185/07/18

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