Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration

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@article{46702eb2585c4e8887f0e9ba50bc9a41,

title = "Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration",

author = "{\'E}amon O'Connor and Karim Cherkaoui and Scott Monaghan and Brendan Sheehan and Povey, \{Ian M\} and Hurley, \{Paul K\}",

year = "2017",

language = "Undefined/Unknown",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration

AU - O'Connor, Éamon

AU - Cherkaoui, Karim

AU - Monaghan, Scott

AU - Sheehan, Brendan

AU - Povey, Ian M

AU - Hurley, Paul K

PY - 2017

Y1 - 2017

M3 - Article

SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -