Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

O'Connor; K. Cherkaoui; S. Monaghan; B. Sheehan; I. M. Povey; P. K. Hurley

doi:10.1063/1.4973971

Inversion in the In_0.53Ga_0.47As metal-oxide-semiconductor system: Impact of the In_0.53Ga_0.47As doping concentration

O'Connor
, K. Cherkaoui
, S. Monaghan
, B. Sheehan
, I. M. Povey
, P. K. Hurley

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

In_0.53Ga_0.47As metal-oxide-semiconductor (MOS) capacitors with an Al₂O₃ gate oxide and a range of n and p-type In_0.53Ga_0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, τ_g, extracted from experimentally measured transition frequencies, ω_m, using physics based a.c. simulations, demonstrated a reduction in τ_g with increasing epitaxial doping concentration. The frequency scaled conductance, G/ω, in strong inversion allowed the estimation of accurate C_ox values for these MOS devices.

Original language	English
Article number	032902
Journal	Applied Physics Letters
Volume	110
Issue number	3
DOIs	https://doi.org/10.1063/1.4973971
Publication status	Published - 16 Jan 2017

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10.1063/1.4973971

https://hdl.handle.net/10468/4021Licence: CC BY

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title = "Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration",

abstract = "In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, τg, extracted from experimentally measured transition frequencies, ωm, using physics based a.c. simulations, demonstrated a reduction in τg with increasing epitaxial doping concentration. The frequency scaled conductance, G/ω, in strong inversion allowed the estimation of accurate Cox values for these MOS devices.",

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T2 - Impact of the In0.53Ga0.47As doping concentration

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AU - Monaghan, S.

AU - Sheehan, B.

AU - Povey, I. M.

AU - Hurley, P. K.

PY - 2017/1/16

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AB - In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, τg, extracted from experimentally measured transition frequencies, ωm, using physics based a.c. simulations, demonstrated a reduction in τg with increasing epitaxial doping concentration. The frequency scaled conductance, G/ω, in strong inversion allowed the estimation of accurate Cox values for these MOS devices.

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Inversion in the In_0.53Ga_0.47As metal-oxide-semiconductor system: Impact of the In_0.53Ga_0.47As doping concentration

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