Investigating Interface States and Oxide Traps in the MoS2/Oxide/Si System

E. Coleman; G. Mirabelli; P. Bolshakov; P. Zhao; E. Caruso; F. Gity; S. Monaghan; K. Cherkaoui; V. Balestra; R. M. Wallace; C. D. Young; R. Duffy; P. K. Hurley

doi:10.1016/j.sse.2021.108123

Investigating Interface States and Oxide Traps in the MoS2/Oxide/Si System

E. Coleman
, G. Mirabelli
, P. Bolshakov
, P. Zhao
, E. Caruso
, F. Gity
, S. Monaghan
, K. Cherkaoui
, V. Balestra
, R. M. Wallace
, C. D. Young
, R. Duffy
, P. K. Hurley

University of Texas at Dallas

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS₂ flakes onto Al₂O₃ or SiO₂ layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS₂/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.

Original language	English
Article number	108123
Journal	Solid-State Electronics
Volume	186
DOIs	https://doi.org/10.1016/j.sse.2021.108123 https://doi.org/10.1016/J.SSE.2021.108123
Publication status	Published - Dec 2021

Keywords

2D materials
Interface states
MoS/oxide/Si system
MOSFET
Oxide traps
Tunnel FET

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Coleman, E., Mirabelli, G., Bolshakov, P., Zhao, P., Caruso, E., Gity, F., Monaghan, S., Cherkaoui, K., Balestra, V., Wallace, R. M., Young, C. D., Duffy, R., & Hurley, P. K. (2021). Investigating Interface States and Oxide Traps in the MoS2/Oxide/Si System. Solid-State Electronics, 186, Article 108123. https://doi.org/10.1016/j.sse.2021.108123, https://doi.org/10.1016/J.SSE.2021.108123

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title = "Investigating Interface States and Oxide Traps in the MoS2/Oxide/Si System",

abstract = "This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2 layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS2/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.",

keywords = "2D materials, Interface states, MoS/oxide/Si system, MOSFET, Oxide traps, Tunnel FET",

author = "E. Coleman and G. Mirabelli and P. Bolshakov and P. Zhao and E. Caruso and F. Gity and S. Monaghan and K. Cherkaoui and V. Balestra and Wallace, \{R. M.\} and Young, \{C. D.\} and R. Duffy and Hurley, \{P. K.\}",

note = "Publisher Copyright: {\textcopyright} 2021 The Author(s)",

year = "2021",

month = dec,

doi = "10.1016/j.sse.2021.108123",

language = "English",

volume = "186",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Investigating Interface States and Oxide Traps in the MoS2/Oxide/Si System

AU - Coleman, E.

AU - Mirabelli, G.

AU - Bolshakov, P.

AU - Zhao, P.

AU - Caruso, E.

AU - Gity, F.

AU - Monaghan, S.

AU - Cherkaoui, K.

AU - Balestra, V.

AU - Wallace, R. M.

AU - Young, C. D.

AU - Duffy, R.

AU - Hurley, P. K.

PY - 2021/12

Y1 - 2021/12

N2 - This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2 layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS2/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.

AB - This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2 layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS2/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.

KW - 2D materials

KW - Interface states

KW - MoS/oxide/Si system

KW - MOSFET

KW - Oxide traps

KW - Tunnel FET

UR - https://www.scopus.com/pages/publications/85109107777

U2 - 10.1016/j.sse.2021.108123

DO - 10.1016/j.sse.2021.108123

M3 - Article

AN - SCOPUS:85109107777

SN - 0038-1101

VL - 186

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108123

ER -

Investigating Interface States and Oxide Traps in the MoS2/Oxide/Si System

Abstract

Keywords

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