Investigating positive oxide charge in the SiO2/3C-SiC MOS system

Karim Cherkaoui; Alan Blake; Yuri Y. Gomeniuk; Jun Lin; Brendan Sheehan; Mary White; Paul K. Hurley; Peter J. Ward

doi:10.1063/1.5030636

Investigating positive oxide charge in the SiO₂/3C-SiC MOS system

Karim Cherkaoui
, Alan Blake
, Yuri Y. Gomeniuk
, Jun Lin
, Brendan Sheehan
, Mary White
, Paul K. Hurley
, Peter J. Ward

Research output: Contribution to journal › Article › peer-review

Abstract

This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO₂ formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO₂ or deposited SiO₂ by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO₂ on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO₂/3C-SiC system is also discussed based on the current data and previously published results.

Original language	English
Article number	085323
Journal	AIP Advances
Volume	8
Issue number	8
DOIs	https://doi.org/10.1063/1.5030636
Publication status	Published - 1 Aug 2018

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10.1063/1.5030636

https://hdl.handle.net/10468/8893Licence: CC BY

Cite this

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title = "Investigating positive oxide charge in the SiO2/3C-SiC MOS system",

abstract = "This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.",

author = "Karim Cherkaoui and Alan Blake and Gomeniuk, \{Yuri Y.\} and Jun Lin and Brendan Sheehan and Mary White and Hurley, \{Paul K.\} and Ward, \{Peter J.\}",

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doi = "10.1063/1.5030636",

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T1 - Investigating positive oxide charge in the SiO2/3C-SiC MOS system

AU - Cherkaoui, Karim

AU - Blake, Alan

AU - Gomeniuk, Yuri Y.

AU - Lin, Jun

AU - Sheehan, Brendan

AU - White, Mary

AU - Hurley, Paul K.

AU - Ward, Peter J.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.

AB - This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.

UR - https://www.scopus.com/pages/publications/85052805683

U2 - 10.1063/1.5030636

DO - 10.1063/1.5030636

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VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 085323

ER -

Investigating positive oxide charge in the SiO₂/3C-SiC MOS system

Abstract

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