Investigating the transient response of Schottky barrier back-gated MoS₂ transistors

Material Science

• Schottky Barrier 100%
• Transistor 100%
• Oxide Compound 33%
• Silicon 33%
• Film 33%
• Thin Films 33%
• Lithography 33%
• Chemical Vapor Deposition 33%
• Capacitance 33%
• Molybdenum 33%
• Schottky Diode 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Charge Trapping 33%
• Transfer Film 33%

Engineering

• Schottky Barrier 100%
• Molybdenum Disulfide 100%
• Transient Analysis 100%
• Net Charge 20%
• Limitations 10%
• Thin Films 10%
• Vapor Deposition 10%
• Si Substrate 10%
• Optical Lithography 10%
• Silicon Dioxide 10%
• Response Time 10%
• Chemical Vapor Deposition 10%
• Silicon Substrate 10%
• Channel Device 10%
• Minority Carrier 10%
• Fermi Level 10%
• Illumination Condition 10%
• Photodetector 10%
• Substrate Temperature 10%
• Metal-Oxide-Semiconductor Field-Effect Transistor 10%
• Ambient Condition 10%
• Dynamic Response 10%
• Temperature Condition 10%