Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V

John A. O'Sullivan; Kevin G. McCarthy; Aidan C. Murphy; Patrick J. Murphy

doi:10.1109/LMWC.2006.872144

Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V

John A. O'Sullivan
, Kevin G. McCarthy
, Aidan C. Murphy
, Patrick J. Murphy

School of Engineering and Architecture

Research output: Contribution to journal › Review article › peer-review

Abstract

This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At 1 V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.

Original language	English
Pages (from-to)	170-172
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	16
Issue number	4
DOIs	https://doi.org/10.1109/LMWC.2006.872144
Publication status	Published - Apr 2006

Keywords

Class E/F
Heterojunction bipolar transistor (HBT)
RFIC power amplifier (PA)

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10.1109/LMWC.2006.872144

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@article{9031bce6206c4cacb7fcf9bfb4863207,

title = "Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V",

abstract = "This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39\% is achieved for a supply voltage of 1.8 V. At 1 V, a maximum PAE of 36\% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.",

keywords = "Class E/F, Heterojunction bipolar transistor (HBT), RFIC power amplifier (PA)",

author = "O'Sullivan, \{John A.\} and McCarthy, \{Kevin G.\} and Murphy, \{Aidan C.\} and Murphy, \{Patrick J.\}",

year = "2006",

month = apr,

doi = "10.1109/LMWC.2006.872144",

language = "English",

volume = "16",

pages = "170--172",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V

AU - O'Sullivan, John A.

AU - McCarthy, Kevin G.

AU - Murphy, Aidan C.

AU - Murphy, Patrick J.

PY - 2006/4

Y1 - 2006/4

N2 - This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At 1 V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.

AB - This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At 1 V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.

KW - Class E/F

KW - Heterojunction bipolar transistor (HBT)

KW - RFIC power amplifier (PA)

UR - https://www.scopus.com/pages/publications/33645671431

U2 - 10.1109/LMWC.2006.872144

DO - 10.1109/LMWC.2006.872144

M3 - Review article

AN - SCOPUS:33645671431

SN - 1531-1309

VL - 16

SP - 170

EP - 172

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 4

ER -

Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V

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Keywords

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