Investigation of charged defects in LPCVD-SiOxNY thin films deposited on (111) Si

A. Szekeres; E. Halova; S. Alexandrova; M. Modreanu

Investigation of charged defects in LPCVD-SiO_xN_Y thin films deposited on (111) Si

A. Szekeres
, E. Halova
, S. Alexandrova
, M. Modreanu

Bulgarian Academy of Sciences

Research output: Contribution to conference › Paper › peer-review

Abstract

The interface charged defects in amorphous silicon oxynitride (SiO_xN_y) films deposited on (111) Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860°C and at a pressure of 400 mTorr, using a mixture of SiCl₂H₂-NH₃-N₂O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiO_XN_Y/Si interface, which leads to suppression of defects generation.

Original language	English
Pages	519-522
Number of pages	4
Publication status	Published - 2001
Externally published	Yes
Event	2001 International Semiconductor Conference - Sinaia, Romania Duration: 9 Oct 2001 → 13 Oct 2001

Conference

Conference	2001 International Semiconductor Conference
Country/Territory	Romania
City	Sinaia
Period	9/10/01 → 13/10/01

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Investigation of charged defects in LPCVD-SiOxNY thin films deposited on (111) Si",

abstract = "The interface charged defects in amorphous silicon oxynitride (SiOxNy) films deposited on (111) Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860°C and at a pressure of 400 mTorr, using a mixture of SiCl2H2-NH3-N2O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiOXNY/Si interface, which leads to suppression of defects generation.",

author = "A. Szekeres and E. Halova and S. Alexandrova and M. Modreanu",

year = "2001",

language = "English",

pages = "519--522",

note = "2001 International Semiconductor Conference ; Conference date: 09-10-2001 Through 13-10-2001",

}

TY - CONF

T1 - Investigation of charged defects in LPCVD-SiOxNY thin films deposited on (111) Si

AU - Szekeres, A.

AU - Halova, E.

AU - Alexandrova, S.

AU - Modreanu, M.

PY - 2001

Y1 - 2001

N2 - The interface charged defects in amorphous silicon oxynitride (SiOxNy) films deposited on (111) Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860°C and at a pressure of 400 mTorr, using a mixture of SiCl2H2-NH3-N2O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiOXNY/Si interface, which leads to suppression of defects generation.

AB - The interface charged defects in amorphous silicon oxynitride (SiOxNy) films deposited on (111) Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860°C and at a pressure of 400 mTorr, using a mixture of SiCl2H2-NH3-N2O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiOXNY/Si interface, which leads to suppression of defects generation.

UR - https://www.scopus.com/pages/publications/0035744274

M3 - Paper

AN - SCOPUS:0035744274

SP - 519

EP - 522

T2 - 2001 International Semiconductor Conference

Y2 - 9 October 2001 through 13 October 2001

ER -

Investigation of charged defects in LPCVD-SiO_xN_Y thin films deposited on (111) Si

Abstract

Conference

UN SDGs

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