@inbook{b4fd5e6e25cc464290c92be7f5a6eea8,
title = "Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate",
abstract = "In this work, we have investigated current conduction mechanisms in HfO2 thin film deposited on silicon substrate by RF sputtering technique. The thin films of HfO2 were deposited on p-type silicon substrates. FTIR measurement shows the presence of hafnium in the film. Among the various conduction mechanisms the 13.7 nm thin HfO2 film on Si follows the Fowler Nordheim (FN) tunneling. The Poole Frenkel (PF) emission, Schottky emission (SE) and Direct Tunneling (DT) also studied. The barrier height (ΦB) of 0.74 eV is calculated from experimental work through Fowler Nordheim tunneling mechanism.",
keywords = "FN Tunneling, FTIR, HfO, High-k, Leakage Current Density",
author = "Khairnar, \{Anil G.\} and Agrawal, \{Khushaboo S.\} and Patil, \{Vilas S.\} and Mahajan, \{Ashok M.\}",
note = "Publisher Copyright: {\textcopyright} Springer International Publishing Switzerland 2014.; 17th International Workshop on the Physics of Semiconductor Devices, IWPSD 2013 ; Conference date: 10-12-2013 Through 14-12-2013",
year = "2014",
doi = "10.1007/978-3-319-03002-9\_7",
language = "English",
isbn = "9783319030012",
series = "Environmental Science and Engineering",
publisher = "Springer Science and Business Media Deutschland GmbH",
pages = "25--27",
editor = "V.K. Jain and Abhishek Verma",
booktitle = "Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013",
address = "Germany",
}