Investigation of defects in 3C-SiC using deep level transient spectroscopy

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Journal of Physics D: Applied Physics
DOIs	https://doi.org/10.1088/1361-6463/ae1e0e
Publication status	Published - 24 Nov 2025

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@article{4e90b6ef0aac485582a87fa9eba0fcf2,

title = "Investigation of defects in 3C-SiC using deep level transient spectroscopy",

author = "Feiler, \{P U\} and T Mchedlidze and K Cherkaoui and Ward, \{Peter J.\} and A Blake and J Heitmann and Beyer, \{F C\}",

year = "2025",

month = nov,

day = "24",

doi = "10.1088/1361-6463/ae1e0e",

language = "Undefined/Unknown",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

}

TY - JOUR

T1 - Investigation of defects in 3C-SiC using deep level transient spectroscopy

AU - Feiler, P U

AU - Mchedlidze, T

AU - Cherkaoui, K

AU - Ward, Peter J.

AU - Blake, A

AU - Heitmann, J

AU - Beyer, F C

PY - 2025/11/24

Y1 - 2025/11/24

UR - https://doi.org/10.1088/1361-6463/ae1e0e

U2 - 10.1088/1361-6463/ae1e0e

DO - 10.1088/1361-6463/ae1e0e

M3 - Article

SN - 0022-3727

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

ER -