Investigation of High-k/In_xGa_1-xas interfaces

Engineering

• Compound Semiconductor 100%
• Indium Gallium Arsenide 50%
• Dielectrics 50%
• Aluminum Oxide 50%
• Field-Effect Transistor 50%
• Interface State 50%
• Control Interface 50%
• Characterization Method 50%

Chemistry

• Conductance 100%
• Aluminum Oxide 50%
• Dielectric Material 50%
• Field Effect 50%
• Interface State 50%
• Electron Mobility 50%
• Magnesium Oxide 50%

Material Science

• Capacitance 100%
• Compound Semiconductor 66%
• Aluminum Oxide 33%
• Density 33%
• Dielectric Material 33%
• Indium Gallium Arsenide 33%
• Field Effect Transistor 33%
• Magnesium Oxide 33%
• Electron Mobility 33%