Investigation of microstructural properties of nitrogen doped ZnO thin films formed by magnetron sputtering on silicon substrate

Zinc oxide (ZnO) is a semiconductor with a wurtzite-type structure, useful for a variety of optical, optoelectronic and piezoelectric applications. We report here on the post deposition treatment (Rapid Thermal Annealing at 400 and 550°C) impact on the microstructural properties of N-doped ZnO (ZnO:N) thin films grown on silicon substrate by r.f. magnetron sputtering of ZnN target. The ZnO:N films have been characterized by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning (SEM) and Transmission (TEM) Electron Microscopy coupled with Energy Dispersive X-ray (EDX) and Selected Area Electron Diffraction (SAED) respectively and Fourier Transform Infrared (FTIR) Spectroscopy. XRD confirms that ZnO:N films are polycrystalline in the as deposited state. SEM, TEM and XRD measurements revealed a polycrystalline film with preferentially oriented columnar crystals. AFM studies reveal a drastic change of ZnO surface morphology upon RTA and the existence of areas with different roughness in the sample thermally treated at 400°C. FTIR, XRD and TEM results shows that disorder associated mainly with grain boundary defects decreases as the annealing temperature increases.