Investigation on optical and electrical properties of LPCVD SIOxNy thin films

M. Modreanu; M. Gartner; A. Szekeres; S. Alexandrova

Investigation on optical and electrical properties of LPCVD SIO_xN_y thin films

M. Modreanu
, M. Gartner
, A. Szekeres
, S. Alexandrova

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

Amorphous silicon oxynitride (a-SiO_xN_y) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at temperature range of 820-880°C and 400 mTorr, using mixture of SiCl₂H₂-NH₃-N₂O. The investigation on optical and electrical properties was made using spectroellipsometry (SE) and the analyses of 1 MHz capacitance-voltage characteristics. To calculate optical and microstructural parameters of the films we used different approaches (Bruggeman-EMA, Cauchy, Sellmeier and Wemple-Di Domenico). The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiO_xN_y/Si interface which leads to suppression of their generation.

Original language	English
Pages	515-518
Number of pages	4
Publication status	Published - 2000
Externally published	Yes
Event	2000 International Semiconductor Conference - Sinaia, Romania Duration: 10 Oct 2000 → 14 Oct 2000

Conference

Conference	2000 International Semiconductor Conference
Country/Territory	Romania
City	Sinaia
Period	10/10/00 → 14/10/00

Cite this

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title = "Investigation on optical and electrical properties of LPCVD SIOxNy thin films",

abstract = "Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at temperature range of 820-880°C and 400 mTorr, using mixture of SiCl2H2-NH3-N2O. The investigation on optical and electrical properties was made using spectroellipsometry (SE) and the analyses of 1 MHz capacitance-voltage characteristics. To calculate optical and microstructural parameters of the films we used different approaches (Bruggeman-EMA, Cauchy, Sellmeier and Wemple-Di Domenico). The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of their generation.",

author = "M. Modreanu and M. Gartner and A. Szekeres and S. Alexandrova",

year = "2000",

language = "English",

pages = "515--518",

note = "2000 International Semiconductor Conference ; Conference date: 10-10-2000 Through 14-10-2000",

}

TY - CONF

T1 - Investigation on optical and electrical properties of LPCVD SIOxNy thin films

AU - Modreanu, M.

AU - Gartner, M.

AU - Szekeres, A.

AU - Alexandrova, S.

PY - 2000

Y1 - 2000

N2 - Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at temperature range of 820-880°C and 400 mTorr, using mixture of SiCl2H2-NH3-N2O. The investigation on optical and electrical properties was made using spectroellipsometry (SE) and the analyses of 1 MHz capacitance-voltage characteristics. To calculate optical and microstructural parameters of the films we used different approaches (Bruggeman-EMA, Cauchy, Sellmeier and Wemple-Di Domenico). The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of their generation.

AB - Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at temperature range of 820-880°C and 400 mTorr, using mixture of SiCl2H2-NH3-N2O. The investigation on optical and electrical properties was made using spectroellipsometry (SE) and the analyses of 1 MHz capacitance-voltage characteristics. To calculate optical and microstructural parameters of the films we used different approaches (Bruggeman-EMA, Cauchy, Sellmeier and Wemple-Di Domenico). The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of their generation.

UR - https://www.scopus.com/pages/publications/0034449261

M3 - Paper

AN - SCOPUS:0034449261

SP - 515

EP - 518

T2 - 2000 International Semiconductor Conference

Y2 - 10 October 2000 through 14 October 2000

ER -

Investigation on optical and electrical properties of LPCVD SIO_xN_y thin films

Abstract

Conference

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