Investigation on optical and microstructural properties of photoluminescent LPCVD SiOxNy thin films

M. Modreanu; Mariuca Gartner; N. Tomozeiu; J. Seekamp; P. Cosmin

doi:10.1016/S0925-3467(01)00038-6

Investigation on optical and microstructural properties of photoluminescent LPCVD SiO_xN_y thin films

M. Modreanu
, Mariuca Gartner
, N. Tomozeiu
, J. Seekamp
, P. Cosmin

Research output: Contribution to journal › Article › peer-review

Abstract

Amorphous silicon oxynitride (a-SiO_xN_y) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at 860°C and 400 mTorr, using a mixture of SiCl₂H₂-NH₃-N₂O. The dependence of the film properties on the deposition temperature and the gas flow ratio was studied by spectroellipsometry (SE) and infrared spectroscopy (IR). To calculate the optical and microstructural parameters of the films from SE data, three different approaches (Bruggeman-EMA, Cauchy and Sellmeier) were used. The comparison of the results shows a good agreement between all three models. Photoluminescence (PL) phenomena in as-deposited LPCVD silicon oxynitride are presented and compared to results reported in literature.

Original language	English
Pages (from-to)	145-148
Number of pages	4
Journal	Optical Materials
Volume	17
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(01)00038-6
Publication status	Published - Jun 2001
Externally published	Yes
Event	Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France Duration: 30 May 2000 → 2 Jun 2000

Keywords

Ellipsometry
IR absorption
LPCVD
Oxynitride
Photoluminescence
Thin films

Access to Document

10.1016/S0925-3467(01)00038-6

Cite this

@article{00432eb8ff6346f59cc0ab8c3ece741c,

title = "Investigation on optical and microstructural properties of photoluminescent LPCVD SiOxNy thin films",

abstract = "Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at 860°C and 400 mTorr, using a mixture of SiCl2H2-NH3-N2O. The dependence of the film properties on the deposition temperature and the gas flow ratio was studied by spectroellipsometry (SE) and infrared spectroscopy (IR). To calculate the optical and microstructural parameters of the films from SE data, three different approaches (Bruggeman-EMA, Cauchy and Sellmeier) were used. The comparison of the results shows a good agreement between all three models. Photoluminescence (PL) phenomena in as-deposited LPCVD silicon oxynitride are presented and compared to results reported in literature.",

keywords = "Ellipsometry, IR absorption, LPCVD, Oxynitride, Photoluminescence, Thin films",

author = "M. Modreanu and Mariuca Gartner and N. Tomozeiu and J. Seekamp and P. Cosmin",

year = "2001",

month = jun,

doi = "10.1016/S0925-3467(01)00038-6",

language = "English",

volume = "17",

pages = "145--148",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Optoelectronics I: Materials and Technologies for Optoelectronic Devices ; Conference date: 30-05-2000 Through 02-06-2000",

}

TY - JOUR

T1 - Investigation on optical and microstructural properties of photoluminescent LPCVD SiOxNy thin films

AU - Modreanu, M.

AU - Gartner, Mariuca

AU - Tomozeiu, N.

AU - Seekamp, J.

AU - Cosmin, P.

PY - 2001/6

Y1 - 2001/6

N2 - Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at 860°C and 400 mTorr, using a mixture of SiCl2H2-NH3-N2O. The dependence of the film properties on the deposition temperature and the gas flow ratio was studied by spectroellipsometry (SE) and infrared spectroscopy (IR). To calculate the optical and microstructural parameters of the films from SE data, three different approaches (Bruggeman-EMA, Cauchy and Sellmeier) were used. The comparison of the results shows a good agreement between all three models. Photoluminescence (PL) phenomena in as-deposited LPCVD silicon oxynitride are presented and compared to results reported in literature.

AB - Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at 860°C and 400 mTorr, using a mixture of SiCl2H2-NH3-N2O. The dependence of the film properties on the deposition temperature and the gas flow ratio was studied by spectroellipsometry (SE) and infrared spectroscopy (IR). To calculate the optical and microstructural parameters of the films from SE data, three different approaches (Bruggeman-EMA, Cauchy and Sellmeier) were used. The comparison of the results shows a good agreement between all three models. Photoluminescence (PL) phenomena in as-deposited LPCVD silicon oxynitride are presented and compared to results reported in literature.

KW - Ellipsometry

KW - IR absorption

KW - LPCVD

KW - Oxynitride

KW - Photoluminescence

KW - Thin films

UR - https://www.scopus.com/pages/publications/0035361626

U2 - 10.1016/S0925-3467(01)00038-6

DO - 10.1016/S0925-3467(01)00038-6

M3 - Article

AN - SCOPUS:0035361626

SN - 0925-3467

VL - 17

SP - 145

EP - 148

JO - Optical Materials

JF - Optical Materials

IS - 1-2

T2 - Optoelectronics I: Materials and Technologies for Optoelectronic Devices

Y2 - 30 May 2000 through 2 June 2000

ER -

Investigation on optical and microstructural properties of photoluminescent LPCVD SiO_xN_y thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this