@article{e62f2fbc01d343ad9059bef7bf725412,
title = "(Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric",
keywords = "Materials science, Dielectric, Transistor, Optoelectronics, Nanotechnology, Engineering physics, Gate dielectric, Field-effect transistor, Quantum tunnelling, Electrical engineering, Engineering, Voltage",
author = "Paul Hurley",
year = "2016",
doi = "10.1149/ma2016-02/27/1821",
language = "English",
journal = "Meeting Abstracts",
issn = "1091-8213",
}