(Invited) Investigating the Electronic Properties of Narrow Band Gap III-V Mos Systems

Paul Hurley

doi:10.1149/ma2018-02/34/1164

(Invited) Investigating the Electronic Properties of Narrow Band Gap III-V Mos Systems

Paul Hurley

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Meeting Abstracts
DOIs	https://doi.org/10.1149/ma2018-02/34/1164
Publication status	Published - 2018

Keywords

Materials science
Optoelectronics
Photonics
MOSFET
Semiconductor
Quantum tunnelling
Band gap
Electrical engineering
Engineering physics
Transistor
Physics
Engineering
Voltage

Access to Document

10.1149/ma2018-02/34/1164

https://openalex.org/W2903242632Licence: CC BY-NC-ND

Cite this

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title = "(Invited) Investigating the Electronic Properties of Narrow Band Gap III-V Mos Systems",

keywords = "Materials science, Optoelectronics, Photonics, MOSFET, Semiconductor, Quantum tunnelling, Band gap, Electrical engineering, Engineering physics, Transistor, Physics, Engineering, Voltage",

author = "Paul Hurley",

year = "2018",

doi = "10.1149/ma2018-02/34/1164",

language = "English",

journal = "Meeting Abstracts",

issn = "1091-8213",

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T1 - (Invited) Investigating the Electronic Properties of Narrow Band Gap III-V Mos Systems

AU - Hurley, Paul

PY - 2018

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KW - Materials science

KW - Optoelectronics

KW - Photonics

KW - MOSFET

KW - Semiconductor

KW - Quantum tunnelling

KW - Band gap

KW - Electrical engineering

KW - Engineering physics

KW - Transistor

KW - Physics

KW - Engineering

KW - Voltage

U2 - 10.1149/ma2018-02/34/1164

DO - 10.1149/ma2018-02/34/1164

M3 - Article

SN - 1091-8213

JO - Meeting Abstracts

JF - Meeting Abstracts

ER -