@article{74905024e95a42a184f767adf0b8b7ac,
title = "(Invited) Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics",
keywords = "Materials science, Optoelectronics, Transistor, Dielectric, High-{\^I}º dielectric, Metal gate, Dangling bond, Gate dielectric, MOSFET, Molybdenum disulfide, Field-effect transistor, Silicon, Layer (electronics), Short-channel effect, Nanotechnology, Gate oxide, Engineering physics, Electrical engineering, Voltage, Engineering, Metallurgy",
author = "Paul Hurley",
year = "2017",
doi = "10.1149/ma2017-02/14/839",
language = "English",
journal = "Meeting Abstracts",
issn = "1091-8213",
}