(Invited) Material Porosity

Colm O'Dwyer

doi:10.1149/10903.0037ecst

(Invited) Material Porosity

Colm O'Dwyer

School of Chemistry

Trinity College Dublin

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Big pores, small pores, ordered pores, random pores-they all have a function and as is often found, show behaviour in new materials that is not always predicted or obvious at the outset. I started my research journey trying to put extremely thin films onto near-perfect III-V crystals to control (opto)electronic properties and when the first TEM on our campus showed remarkable pore growth and structure in InP almost 21 years ago, the electrochemical modification of the InP made more sense. In this paper, I will summarise a few aspects of research into porous materials and semiconductors, from porous InP that led to studies of other porous semiconductors such as silicon, GaN, ZnO and Indium Tin oxide (ITO), to periodically ordered photonic crystal porous structures and some optical, thermal and electrochemical properties, photocatalysis, studies in batteries and related that were enabled or modified by the porous structure.

Original language	English
Title of host publication	ECS Transactions
Pages	37-59
Number of pages	23
Volume	109
Edition	3
DOIs	https://doi.org/10.1149/10903.0037ecst
Publication status	Published - 2022
Event	242nd ECS Meeting - Atlanta, United States Duration: 9 Oct 2022 → 13 Oct 2022

Conference

Conference	242nd ECS Meeting
Country/Territory	United States
City	Atlanta
Period	9/10/22 → 13/10/22

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10.1149/10903.0037ecst

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title = "(Invited) Material Porosity",

abstract = "Big pores, small pores, ordered pores, random pores-they all have a function and as is often found, show behaviour in new materials that is not always predicted or obvious at the outset. I started my research journey trying to put extremely thin films onto near-perfect III-V crystals to control (opto)electronic properties and when the first TEM on our campus showed remarkable pore growth and structure in InP almost 21 years ago, the electrochemical modification of the InP made more sense. In this paper, I will summarise a few aspects of research into porous materials and semiconductors, from porous InP that led to studies of other porous semiconductors such as silicon, GaN, ZnO and Indium Tin oxide (ITO), to periodically ordered photonic crystal porous structures and some optical, thermal and electrochemical properties, photocatalysis, studies in batteries and related that were enabled or modified by the porous structure.",

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note = "Publisher Copyright: {\textcopyright} 2022 ECS-The Electrochemical Society.; 242nd ECS Meeting ; Conference date: 09-10-2022 Through 13-10-2022",

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AB - Big pores, small pores, ordered pores, random pores-they all have a function and as is often found, show behaviour in new materials that is not always predicted or obvious at the outset. I started my research journey trying to put extremely thin films onto near-perfect III-V crystals to control (opto)electronic properties and when the first TEM on our campus showed remarkable pore growth and structure in InP almost 21 years ago, the electrochemical modification of the InP made more sense. In this paper, I will summarise a few aspects of research into porous materials and semiconductors, from porous InP that led to studies of other porous semiconductors such as silicon, GaN, ZnO and Indium Tin oxide (ITO), to periodically ordered photonic crystal porous structures and some optical, thermal and electrochemical properties, photocatalysis, studies in batteries and related that were enabled or modified by the porous structure.

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DO - 10.1149/10903.0037ecst

M3 - Conference proceeding

AN - SCOPUS:85140635145

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SP - 37

EP - 59

BT - ECS Transactions

T2 - 242nd ECS Meeting

Y2 - 9 October 2022 through 13 October 2022

ER -

(Invited) Material Porosity

Abstract

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