@article{45503f8ec51145ad856e48928ed8b407,
title = "(Invited) Multi-Level Non-Volatile Memory in Au/Monolayer MoS2/Au Structures",
keywords = "Passivation, Monolayer, Materials science, Optoelectronics, Resistive random-access memory, Transistor, Resistive touchscreen, Reset (finance), Thermionic emission, Semiconductor, Non-volatile memory, Nanotechnology, Electrode, Layer (electronics), Electrical engineering, Chemistry, Voltage, Electron, Physics, Engineering, Physical chemistry, Financial economics, Economics, Quantum mechanics",
author = "Shubhadeep Bhattacharjee and Enrico Caruso and Niall McEvoy and Coile{\'a}ain, \{Cormac {\'O}\} and Lida Ansari and Roger Nagle and Karim Cherkaoui and Farzan Gity and Hurley, \{P. K.\}",
year = "2020",
month = may,
day = "1",
doi = "10.1149/ma2020-0110858mtgabs",
language = "English",
journal = "Meeting Abstracts",
issn = "1091-8213",
}