Abstract
Dialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3 with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 - 450°C. SEM images show the films to have reasonable morphology and to be crystalline.
| Original language | English |
|---|---|
| Pages (from-to) | 133-138 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 606 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | Chemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA Duration: 29 Nov 1999 → 1 Dec 1999 |