Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2

C. Mauder; E. V. Lutsenko; M. V. Rzheutski; B. Reuters; V. Z. Zubialevich; V. N. Pavlovskii; G. P. Yablonskii; M. Heuken; H. Kalisch; A. Vescan

doi:10.1063/1.3667199

Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO₂

C. Mauder
, E. V. Lutsenko
, M. V. Rzheutski
, B. Reuters
, V. Z. Zubialevich
, V. N. Pavlovskii
, G. P. Yablonskii
, M. Heuken
, H. Kalisch
, A. Vescan

Research output: Contribution to journal › Article › peer-review

Abstract

Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on LiAlO₂ with In content x_In 5-30 were studied. As expected, higher x_In leads to larger strain in the wells and enhances both the splitting between the two highest valence subbands and the RT PL degree of polarization. At low temperatures, an irregular red-shift of the PL component with polarization E || c relative to E ⊥ c is observed, which is ascribed to the contribution of recombination of holes localized at band tails within the second highest valence subband.

Original language	English
Article number	232114
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3667199
Publication status	Published - 5 Dec 2011
Externally published	Yes

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Mauder, C., Lutsenko, E. V., Rzheutski, M. V., Reuters, B., Zubialevich, V. Z., Pavlovskii, V. N., Yablonskii, G. P., Heuken, M., Kalisch, H., & Vescan, A. (2011). Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO₂. Applied Physics Letters, 99(23), Article 232114. https://doi.org/10.1063/1.3667199

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title = "Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2",

abstract = "Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 with In content xIn 5-30 were studied. As expected, higher xIn leads to larger strain in the wells and enhances both the splitting between the two highest valence subbands and the RT PL degree of polarization. At low temperatures, an irregular red-shift of the PL component with polarization E || c relative to E ⊥ c is observed, which is ascribed to the contribution of recombination of holes localized at band tails within the second highest valence subband.",

author = "C. Mauder and Lutsenko, \{E. V.\} and Rzheutski, \{M. V.\} and B. Reuters and Zubialevich, \{V. Z.\} and Pavlovskii, \{V. N.\} and Yablonskii, \{G. P.\} and M. Heuken and H. Kalisch and A. Vescan",

year = "2011",

month = dec,

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doi = "10.1063/1.3667199",

language = "English",

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journal = "Applied Physics Letters",

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AU - Mauder, C.

AU - Lutsenko, E. V.

AU - Rzheutski, M. V.

AU - Reuters, B.

AU - Zubialevich, V. Z.

AU - Pavlovskii, V. N.

AU - Yablonskii, G. P.

AU - Heuken, M.

AU - Kalisch, H.

AU - Vescan, A.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 with In content xIn 5-30 were studied. As expected, higher xIn leads to larger strain in the wells and enhances both the splitting between the two highest valence subbands and the RT PL degree of polarization. At low temperatures, an irregular red-shift of the PL component with polarization E || c relative to E ⊥ c is observed, which is ascribed to the contribution of recombination of holes localized at band tails within the second highest valence subband.

AB - Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 with In content xIn 5-30 were studied. As expected, higher xIn leads to larger strain in the wells and enhances both the splitting between the two highest valence subbands and the RT PL degree of polarization. At low temperatures, an irregular red-shift of the PL component with polarization E || c relative to E ⊥ c is observed, which is ascribed to the contribution of recombination of holes localized at band tails within the second highest valence subband.

UR - https://www.scopus.com/pages/publications/83455172613

U2 - 10.1063/1.3667199

DO - 10.1063/1.3667199

M3 - Article

AN - SCOPUS:83455172613

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232114

ER -

Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO₂

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