k · P model of ordered GaNxAs1-x

E. P. O'Reilly; A. Lindsay

doi:10.1002/(SICI)1521-3951(199911)216:1<131::AID-PSSB131>3.0.CO;2-F

k · P model of ordered GaN_xAs_1-x

E. P. O'Reilly
, A. Lindsay

University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

We present a three-band k · P Hamiltonian to describe the conduction band dispersion of ordered GaN_xAs_1-x crystals for low N concentrations (x ≲ 0.05). The model includes interactions between the highest valence band, lowest conduction band and a higher-lying band formed by N resonant states. The k · P conduction band dispersion is in excellent agreement with full tight-binding calculations, and can be used as a basis for a wide range of studies of Ga_1-yIn_y,N_xAs_1-x heterostructures and devices.

Original language	English
Pages (from-to)	131-134
Number of pages	4
Journal	Physica Status Solidi (B): Basic Research
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<131::AID-PSSB131>3.0.CO;2-F
Publication status	Published - Nov 1999
Externally published	Yes

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10.1002/(SICI)1521-3951(199911)216:1<131::AID-PSSB131>3.0.CO;2-F

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abstract = "We present a three-band k · P Hamiltonian to describe the conduction band dispersion of ordered GaNxAs1-x crystals for low N concentrations (x ≲ 0.05). The model includes interactions between the highest valence band, lowest conduction band and a higher-lying band formed by N resonant states. The k · P conduction band dispersion is in excellent agreement with full tight-binding calculations, and can be used as a basis for a wide range of studies of Ga1-yIny,NxAs1-x heterostructures and devices.",

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N2 - We present a three-band k · P Hamiltonian to describe the conduction band dispersion of ordered GaNxAs1-x crystals for low N concentrations (x ≲ 0.05). The model includes interactions between the highest valence band, lowest conduction band and a higher-lying band formed by N resonant states. The k · P conduction band dispersion is in excellent agreement with full tight-binding calculations, and can be used as a basis for a wide range of studies of Ga1-yIny,NxAs1-x heterostructures and devices.

AB - We present a three-band k · P Hamiltonian to describe the conduction band dispersion of ordered GaNxAs1-x crystals for low N concentrations (x ≲ 0.05). The model includes interactions between the highest valence band, lowest conduction band and a higher-lying band formed by N resonant states. The k · P conduction band dispersion is in excellent agreement with full tight-binding calculations, and can be used as a basis for a wide range of studies of Ga1-yIny,NxAs1-x heterostructures and devices.

UR - https://www.scopus.com/pages/publications/0033242856

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DO - 10.1002/(SICI)1521-3951(199911)216:1<131::AID-PSSB131>3.0.CO;2-F

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JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

k · P model of ordered GaN_xAs_1-x

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