@inproceedings{7179759534cf46b8880095b817e951ad,
title = "Laser and transistor material on Si substrate",
abstract = "In this work we study Ge structures grown on silicon substrates. We use photoluminescence and photoreflectance to determine both direct and indirect gap of Ge under tensile strain. The strain is induced by growing the Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled by a 30 band k·p model based on first principles calculations. Characterization techniques show very good agreement with the calculated energy values.",
keywords = "Ge biaxial strain, Ge on InGaAs, Ge photoluminescence, Ge Si, Ge TFeT, Photoreflectance, Tensile Ge",
author = "Dzianis Saladukha and Ochalski, \{Tomasz J.\} and Armando, \{Felipe Murphy\} and Clavel, \{Michael B.\} and Hudait, \{Mantu K.\}",
note = "Publisher Copyright: {\textcopyright} 2017 SPIE.; Silicon Photonics XII 2017 ; Conference date: 30-01-2017 Through 01-02-2017",
year = "2017",
doi = "10.1117/12.2252383",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Knights, \{Andrew P.\} and Reed, \{Graham T.\}",
booktitle = "Silicon Photonics XII",
address = "United States",
}