Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE

S. R. Armstrong; M. E. Pemble; A. G. Taylor; B. A. Joyce; J. H. Neave; J. Zhang; D. A. Klug

doi:10.1016/0169-4332(92)90093-D

Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE

S. R. Armstrong
, M. E. Pemble
, A. G. Taylor
, B. A. Joyce
, J. H. Neave
, J. Zhang
, D. A. Klug

Research output: Contribution to journal › Article › peer-review

Abstract

The relationship between reflectance anisotropy (RA) signals and As or Ga coverage on GaAs (100) has been investigated by monitoring the RA response through a series of surface reconstructions generated under MBE growth conditions. Under As-rich conditions for which RHEED indicated c(4 × 4) reconstruction the substrate was heated to promote As₂ desorption and distinct desorption transients were observed superimposed upon an approximately monotonic variation in the RA signal which correlate with the observation of the c(4 × 4)As to (2 × 4), (2 × 4) to (3 × 1) and (3 × 1) to (4 × 2)Ga RHEED transitions. These phase transitions were observed to be reversible. It is suggested that these phase transitions involve three distinct types of As species each resulting from the unique nature of each reconstruction, and that the experiment performed here may be thought of as an "optical" thermal desorption experiment.

Original language	English
Pages (from-to)	493-496
Number of pages	4
Journal	Applied Surface Science
Volume	54
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(92)90093-D
Publication status	Published - 1 Jan 1992

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title = "Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE",

abstract = "The relationship between reflectance anisotropy (RA) signals and As or Ga coverage on GaAs (100) has been investigated by monitoring the RA response through a series of surface reconstructions generated under MBE growth conditions. Under As-rich conditions for which RHEED indicated c(4 × 4) reconstruction the substrate was heated to promote As2 desorption and distinct desorption transients were observed superimposed upon an approximately monotonic variation in the RA signal which correlate with the observation of the c(4 × 4)As to (2 × 4), (2 × 4) to (3 × 1) and (3 × 1) to (4 × 2)Ga RHEED transitions. These phase transitions were observed to be reversible. It is suggested that these phase transitions involve three distinct types of As species each resulting from the unique nature of each reconstruction, and that the experiment performed here may be thought of as an {"}optical{"} thermal desorption experiment.",

author = "Armstrong, \{S. R.\} and Pemble, \{M. E.\} and Taylor, \{A. G.\} and Joyce, \{B. A.\} and Neave, \{J. H.\} and J. Zhang and Klug, \{D. A.\}",

year = "1992",

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doi = "10.1016/0169-4332(92)90093-D",

language = "English",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE

AU - Armstrong, S. R.

AU - Pemble, M. E.

AU - Taylor, A. G.

AU - Joyce, B. A.

AU - Neave, J. H.

AU - Zhang, J.

AU - Klug, D. A.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - The relationship between reflectance anisotropy (RA) signals and As or Ga coverage on GaAs (100) has been investigated by monitoring the RA response through a series of surface reconstructions generated under MBE growth conditions. Under As-rich conditions for which RHEED indicated c(4 × 4) reconstruction the substrate was heated to promote As2 desorption and distinct desorption transients were observed superimposed upon an approximately monotonic variation in the RA signal which correlate with the observation of the c(4 × 4)As to (2 × 4), (2 × 4) to (3 × 1) and (3 × 1) to (4 × 2)Ga RHEED transitions. These phase transitions were observed to be reversible. It is suggested that these phase transitions involve three distinct types of As species each resulting from the unique nature of each reconstruction, and that the experiment performed here may be thought of as an "optical" thermal desorption experiment.

AB - The relationship between reflectance anisotropy (RA) signals and As or Ga coverage on GaAs (100) has been investigated by monitoring the RA response through a series of surface reconstructions generated under MBE growth conditions. Under As-rich conditions for which RHEED indicated c(4 × 4) reconstruction the substrate was heated to promote As2 desorption and distinct desorption transients were observed superimposed upon an approximately monotonic variation in the RA signal which correlate with the observation of the c(4 × 4)As to (2 × 4), (2 × 4) to (3 × 1) and (3 × 1) to (4 × 2)Ga RHEED transitions. These phase transitions were observed to be reversible. It is suggested that these phase transitions involve three distinct types of As species each resulting from the unique nature of each reconstruction, and that the experiment performed here may be thought of as an "optical" thermal desorption experiment.

UR - https://www.scopus.com/pages/publications/0026712739

U2 - 10.1016/0169-4332(92)90093-D

DO - 10.1016/0169-4332(92)90093-D

M3 - Article

AN - SCOPUS:0026712739

SN - 0169-4332

VL - 54

SP - 493

EP - 496

JO - Applied Surface Science

JF - Applied Surface Science

IS - C

ER -

Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE

Abstract

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