@inbook{665fb6a8b09f4e9abbdddc16377e09d4,
title = "Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios",
abstract = "The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high ION/IOFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.",
keywords = "dopant activation, Ge, ideality factor, junction, Laser thermal annealing, leakage current",
author = "M. Shayesteh and D. O'Connell and F. Gity and F. Murphy-Armando and R. Yu and K. Huet and I. Toque-Tresonne and F. Cristiano and S. Boninelli and Henrichsen, \{H. H.\} and Petersen, \{D. H.\} and Nielsen, \{P. F.\} and R. Duffy",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 20th International Conference on Ion Implantation Technology, IIT 2014 ; Conference date: 30-06-2014 Through 04-07-2014",
year = "2014",
month = oct,
day = "29",
doi = "10.1109/IIT.2014.6939953",
language = "English",
series = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Rao, \{Mulpuri V.\}",
booktitle = "Proceedings of the International Conference on Ion Implantation Technology",
address = "United States",
}