Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios
- M. Shayesteh
- , D. O'Connell
- , F. Gity
- , F. Murphy-Armando
- , R. Yu
- , K. Huet
- , I. Toque-Tresonne
- , F. Cristiano
- , S. Boninelli
- , H. H. Henrichsen
- , D. H. Petersen
- , P. F. Nielsen
- , R. Duffy
- SCREEN Holdings Co., Ltd.
- Université Fédérale Toulouse Midi-Pyrénées
- National Research Council of Italy
- Technical University of Denmark
- CAPRES A/S
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review