Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

D. V. Lebedev; A. M. Mintairov; M. M. Kulagina; S. I. Troshkov; J. Kapaldo; J. L. Merz; S. Rouvimov; G. Juska; A. Gocalinska; S. T. Moroni; E. Pelucchi

doi:10.1088/1742-6596/690/1/012023

Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

D. V. Lebedev
, A. M. Mintairov
, M. M. Kulagina
, S. I. Troshkov
, J. Kapaldo
, J. L. Merz
, S. Rouvimov
, G. Juska
, A. Gocalinska
, S. T. Moroni
, E. Pelucchi

Research output: Contribution to journal › Article › peer-review

Abstract

AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm² at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.

Original language	English
Article number	012023
Journal	Journal of Physics: Conference Series
Volume	690
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/690/1/012023
Publication status	Published - 26 Feb 2016
Event	17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2015 - St. Petersburg, Russian Federation Duration: 23 Nov 2015 → 27 Nov 2015

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10.1088/1742-6596/690/1/012023

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@article{a64b258b0f7b4905865a0e726865243e,

title = "Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity",

abstract = "AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.",

author = "Lebedev, \{D. V.\} and Mintairov, \{A. M.\} and Kulagina, \{M. M.\} and Troshkov, \{S. I.\} and J. Kapaldo and Merz, \{J. L.\} and S. Rouvimov and G. Juska and A. Gocalinska and Moroni, \{S. T.\} and E. Pelucchi",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2015 ; Conference date: 23-11-2015 Through 27-11-2015",

year = "2016",

month = feb,

day = "26",

doi = "10.1088/1742-6596/690/1/012023",

language = "English",

volume = "690",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

AU - Lebedev, D. V.

AU - Mintairov, A. M.

AU - Kulagina, M. M.

AU - Troshkov, S. I.

AU - Kapaldo, J.

AU - Merz, J. L.

AU - Rouvimov, S.

AU - Juska, G.

AU - Gocalinska, A.

AU - Moroni, S. T.

AU - Pelucchi, E.

PY - 2016/2/26

Y1 - 2016/2/26

N2 - AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.

AB - AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.

UR - https://www.scopus.com/pages/publications/84964931501

U2 - 10.1088/1742-6596/690/1/012023

DO - 10.1088/1742-6596/690/1/012023

M3 - Article

AN - SCOPUS:84964931501

SN - 1742-6588

VL - 690

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012023

T2 - 17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2015

Y2 - 23 November 2015 through 27 November 2015

ER -

Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

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