LDD depletion effects in thin-BOX FDSOI devices with a ground plane

R. Yan; R. Duane; P. Razavi; A. Afzalian; I. Ferain; C. W. Lee; N. Dehdashti-Akhavan; K. Bourdelle; B. Y. Nguyen; J. P. Colinge

doi:10.1109/SOI.2009.5318771

LDD depletion effects in thin-BOX FDSOI devices with a ground plane

R. Yan
, R. Duane
, P. Razavi
, A. Afzalian
, I. Ferain
, C. W. Lee
, N. Dehdashti-Akhavan
, K. Bourdelle
, B. Y. Nguyen
, J. P. Colinge

Tyndall IPES (Integrated Power)

Soitec S.A.
Soitec USA Inc.

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

Original language	English
Title of host publication	2009 IEEE International SOI Conference
DOIs	https://doi.org/10.1109/SOI.2009.5318771
Publication status	Published - 2009
Event	2009 IEEE International SOI Conference - Foster City, CA, United States Duration: 5 Oct 2009 → 8 Oct 2009

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2009 IEEE International SOI Conference
Country/Territory	United States
City	Foster City, CA
Period	5/10/09 → 8/10/09

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10.1109/SOI.2009.5318771

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@inproceedings{c1859ea7db724e01b77809af076de0a8,

title = "LDD depletion effects in thin-BOX FDSOI devices with a ground plane",

abstract = "In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.",

author = "R. Yan and R. Duane and P. Razavi and A. Afzalian and I. Ferain and Lee, \{C. W.\} and N. Dehdashti-Akhavan and K. Bourdelle and Nguyen, \{B. Y.\} and Colinge, \{J. P.\}",

year = "2009",

doi = "10.1109/SOI.2009.5318771",

language = "English",

isbn = "9781424452323",

series = "Proceedings - IEEE International SOI Conference",

booktitle = "2009 IEEE International SOI Conference",

note = "2009 IEEE International SOI Conference ; Conference date: 05-10-2009 Through 08-10-2009",

}

Yan, R, Duane, R, Razavi, P, Afzalian, A, Ferain, I, Lee, CW, Dehdashti-Akhavan, N, Bourdelle, K, Nguyen, BY & Colinge, JP 2009, LDD depletion effects in thin-BOX FDSOI devices with a ground plane. in 2009 IEEE International SOI Conference., 5318771, Proceedings - IEEE International SOI Conference, 2009 IEEE International SOI Conference, Foster City, CA, United States, 5/10/09. https://doi.org/10.1109/SOI.2009.5318771

TY - GEN

T1 - LDD depletion effects in thin-BOX FDSOI devices with a ground plane

AU - Yan, R.

AU - Duane, R.

AU - Razavi, P.

AU - Afzalian, A.

AU - Ferain, I.

AU - Lee, C. W.

AU - Dehdashti-Akhavan, N.

AU - Bourdelle, K.

AU - Nguyen, B. Y.

AU - Colinge, J. P.

PY - 2009

Y1 - 2009

N2 - In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

AB - In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

UR - https://www.scopus.com/pages/publications/72449188736

U2 - 10.1109/SOI.2009.5318771

DO - 10.1109/SOI.2009.5318771

M3 - Conference proceeding

AN - SCOPUS:72449188736

SN - 9781424452323

T3 - Proceedings - IEEE International SOI Conference

BT - 2009 IEEE International SOI Conference

T2 - 2009 IEEE International SOI Conference

Y2 - 5 October 2009 through 8 October 2009

ER -

LDD depletion effects in thin-BOX FDSOI devices with a ground plane

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