@inbook{c1859ea7db724e01b77809af076de0a8,
title = "LDD depletion effects in thin-BOX FDSOI devices with a ground plane",
abstract = "In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.",
author = "R. Yan and R. Duane and P. Razavi and A. Afzalian and I. Ferain and Lee, \{C. W.\} and N. Dehdashti-Akhavan and K. Bourdelle and Nguyen, \{B. Y.\} and Colinge, \{J. P.\}",
year = "2009",
doi = "10.1109/SOI.2009.5318771",
language = "English",
isbn = "9781424452323",
series = "Proceedings - IEEE International SOI Conference",
booktitle = "2009 IEEE International SOI Conference",
note = "2009 IEEE International SOI Conference ; Conference date: 05-10-2009 Through 08-10-2009",
}