TY - GEN
T1 - Leveraging Design and Technology of the Sb2S3/Au Surface Plasmon Enhanced Hot-Electron Schottky Detectors for Telecom Wavelength Bands Applications
AU - Cobianu, Cornel
AU - Gheorghe, Marin
AU - Santos, Gonzalo
AU - Modreanu, Mircea
AU - Gutierrez, Yael
AU - Moreno, Fernando
AU - Losurdo, Maria
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - The present paper evaluates two possible fabrication technologies of the IR surface plasmon-enhanced hot electron Schottky detectors (SP-HESD) as a function of their critical process parameter (grating spacing) and absorbance performance. The first-one is defined by metal film at the top, (Au/Sb2S3) and the second one by the Sb2S3 film at the top (Sb2S3/Au). Considering the nanolithography requirements and the associated design and simulation results, it is demonstrated that for a spacing of 60 nm between metal fingers, a good leverage between performances and technological realizability is obtained for the Sb2S3/Au technology. In addition, for the first time, the reversibility of Sb2S3/Au (SP-HESD) detector is demonstrated here via simulation, by its capability to detect 'L' telecom wavelength band, (1565-1625) nm, when Sb2S3 is in the crystalline state and 'O' band, 1260-1360 nm, when Sb2S3 is switched to the amorphous phase.
AB - The present paper evaluates two possible fabrication technologies of the IR surface plasmon-enhanced hot electron Schottky detectors (SP-HESD) as a function of their critical process parameter (grating spacing) and absorbance performance. The first-one is defined by metal film at the top, (Au/Sb2S3) and the second one by the Sb2S3 film at the top (Sb2S3/Au). Considering the nanolithography requirements and the associated design and simulation results, it is demonstrated that for a spacing of 60 nm between metal fingers, a good leverage between performances and technological realizability is obtained for the Sb2S3/Au technology. In addition, for the first time, the reversibility of Sb2S3/Au (SP-HESD) detector is demonstrated here via simulation, by its capability to detect 'L' telecom wavelength band, (1565-1625) nm, when Sb2S3 is in the crystalline state and 'O' band, 1260-1360 nm, when Sb2S3 is switched to the amorphous phase.
KW - hot-electrons
KW - IR Schottky detector
KW - reconfigurability
KW - surface plasmons
KW - telecom wavelength
UR - https://www.scopus.com/pages/publications/85178655127
U2 - 10.1109/CAS59036.2023.10303717
DO - 10.1109/CAS59036.2023.10303717
M3 - Conference proceeding
AN - SCOPUS:85178655127
T3 - Proceedings of the International Semiconductor Conference, CAS
SP - 117
EP - 120
BT - 2023 46th International Semiconductor Conference, CAS 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th International Semiconductor Conference, CAS 2023
Y2 - 11 October 2023 through 13 October 2023
ER -