Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

  • M. Guina
  • , S. Orsila
  • , M. Dumitrescu
  • , M. Saarinen
  • , P. Sipilä
  • , V. Vilokkinen
  • , B. Roycroft
  • , P. Uusimaa
  • , M. Toivonen
  • , M. Pessa

Research output: Contribution to journalArticlepeer-review

Abstract

State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links.

Original languageEnglish
Pages (from-to)786-788
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number7
DOIs
Publication statusPublished - Jul 2000
Externally publishedYes

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