Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	243-245
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	4
Publication status	Published - 2011

Cite this

@article{926c6c923d504cafa72ac0de51506b35,

title = "Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes",

author = "Zhang Yiyun and Guo Enqing and Li Zhi and Wei Tongbo and Li Jing and Yi Xiaoyan and Wang Guohong",

year = "2011",

language = "English",

volume = "24",

pages = "243--245",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes

AU - Yiyun, Zhang

AU - Enqing, Guo

AU - Zhi, Li

AU - Tongbo, Wei

AU - Jing, Li

AU - Xiaoyan, Yi

AU - Guohong, Wang

PY - 2011

Y1 - 2011

M3 - Article

SN - 1041-1135

VL - 24

SP - 243

EP - 245

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

ER -