Liquid injection MOCVD of zirconium dioxide using a novel mixed ligand zirconium precursor

Anthony C. Jones; Timothy J. Leedham; Peter J. Wright; Michael J. Crosbie; Dennis J. Williams; Kirsty A. Fleeting; Hywel O. Davies; David J. Otway; Paul O'Brien

Liquid injection MOCVD of zirconium dioxide using a novel mixed ligand zirconium precursor

Anthony C. Jones
, Timothy J. Leedham
, Peter J. Wright
, Michael J. Crosbie
, Dennis J. Williams
, Kirsty A. Fleeting
, Hywel O. Davies
, David J. Otway
, Paul O'Brien

Inorgtech Limited

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of ZrO₂ have been deposited by liquid injection MOCVD using tetrahydrofuran solutions of the novel mixed ligand precursor Zr₂(OⁱPr)₆(thd)₂ (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Oxide growth was observed over an unusually wide range of temperatures from 250 °C to at least 600 °C. Optimized growth of ZrO₂ occurred between 350 °C and 550 °C, which is considerably lower than the optimum temperature for deposition from the conventional Zr(thd)₄ precursor. Analysis of the films by Auger electron spectroscopy showed that carbon was present at levels of between approximately 2 at.-% and 11 at.-%, depending on substrate temperature and oxygen concentration in the gas phase.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Advanced Materials
Volume	10
Issue number	14
Publication status	Published - 1 Oct 1998
Externally published	Yes

Cite this

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title = "Liquid injection MOCVD of zirconium dioxide using a novel mixed ligand zirconium precursor",

abstract = "Thin films of ZrO2 have been deposited by liquid injection MOCVD using tetrahydrofuran solutions of the novel mixed ligand precursor Zr2(OiPr)6(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Oxide growth was observed over an unusually wide range of temperatures from 250 °C to at least 600 °C. Optimized growth of ZrO2 occurred between 350 °C and 550 °C, which is considerably lower than the optimum temperature for deposition from the conventional Zr(thd)4 precursor. Analysis of the films by Auger electron spectroscopy showed that carbon was present at levels of between approximately 2 at.-\% and 11 at.-\%, depending on substrate temperature and oxygen concentration in the gas phase.",

author = "Jones, \{Anthony C.\} and Leedham, \{Timothy J.\} and Wright, \{Peter J.\} and Crosbie, \{Michael J.\} and Williams, \{Dennis J.\} and Fleeting, \{Kirsty A.\} and Davies, \{Hywel O.\} and Otway, \{David J.\} and Paul O'Brien",

year = "1998",

month = oct,

day = "1",

language = "English",

volume = "10",

pages = "197--201",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "14",

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TY - JOUR

T1 - Liquid injection MOCVD of zirconium dioxide using a novel mixed ligand zirconium precursor

AU - Jones, Anthony C.

AU - Leedham, Timothy J.

AU - Wright, Peter J.

AU - Crosbie, Michael J.

AU - Williams, Dennis J.

AU - Fleeting, Kirsty A.

AU - Davies, Hywel O.

AU - Otway, David J.

AU - O'Brien, Paul

PY - 1998/10/1

Y1 - 1998/10/1

N2 - Thin films of ZrO2 have been deposited by liquid injection MOCVD using tetrahydrofuran solutions of the novel mixed ligand precursor Zr2(OiPr)6(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Oxide growth was observed over an unusually wide range of temperatures from 250 °C to at least 600 °C. Optimized growth of ZrO2 occurred between 350 °C and 550 °C, which is considerably lower than the optimum temperature for deposition from the conventional Zr(thd)4 precursor. Analysis of the films by Auger electron spectroscopy showed that carbon was present at levels of between approximately 2 at.-% and 11 at.-%, depending on substrate temperature and oxygen concentration in the gas phase.

AB - Thin films of ZrO2 have been deposited by liquid injection MOCVD using tetrahydrofuran solutions of the novel mixed ligand precursor Zr2(OiPr)6(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Oxide growth was observed over an unusually wide range of temperatures from 250 °C to at least 600 °C. Optimized growth of ZrO2 occurred between 350 °C and 550 °C, which is considerably lower than the optimum temperature for deposition from the conventional Zr(thd)4 precursor. Analysis of the films by Auger electron spectroscopy showed that carbon was present at levels of between approximately 2 at.-% and 11 at.-%, depending on substrate temperature and oxygen concentration in the gas phase.

UR - https://www.scopus.com/pages/publications/0032182605

M3 - Article

AN - SCOPUS:0032182605

SN - 0935-9648

VL - 10

SP - 197

EP - 201

JO - Advanced Materials

JF - Advanced Materials

IS - 14

ER -

Liquid injection MOCVD of zirconium dioxide using a novel mixed ligand zirconium precursor

Abstract

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