Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures

Interface structure and composition in pseudomorphic ZnSe/GaAs(001) heterostructures grown using interface fabrication procedures were compared. The fabrication procedures produce epilayers with minimum stacking fault densities. A 1 nm thick intermixed region at the interface that was depleted of As and comprised of a As alloy with zincblende structure was detected. Results indicate that Ga-Se reactions at the ZnSe/GaAs interface do not necessarily leads to nucleation of high densities of stacking faults.