@inproceedings{4747f120c6aa421cbfe43b4b08b1867d,
title = "Long wavelength (1.02-1.03 μm) InGaAs/GaAs lasers fabricated by MBE",
abstract = "The operation of InGaAs/GaAs SCH SQW lasers emitting at the wavelength 1.02-1.03 μm, fabricated by MBE technology, is reported. Longer wavelength of emission was achieved by applying high indium content in the active region. The paper presents characteristics of fabricated structures measured at room temperature (T=300K) under pulsed operation. Obtained results are promising and give hope for fabricating structures emitting at 1.06 μm, which in some applications could replace diode pumped Nd.YAG lasers.",
author = "T. Piwo{\'n}ski and P. Sajewicz and Kubica, \{J. M.\} and K. Regi{\'n}ski and B. Mroziewicz and M. Bugajski",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 ; Conference date: 16-10-2000 Through 18-10-2000",
year = "2000",
doi = "10.1109/ASDAM.2000.889534",
language = "English",
series = "ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "415--420",
editor = "Jan Kuzmik and Jozef Osvald and Stefan Hascik and Juraj Breza",
booktitle = "ASDAM 2000 - Conference Proceedings",
address = "United States",
}