Long wavelength transverse magnetic polarized absorption in 1.3 m InAs/InGaAs dots-in-a-well type active regions

M. T. Crowley; S. C. Heck; S. B. Healy; S. Osborne; D. P. Williams; S. Schulz; E. P. O'Reilly

doi:10.1088/0268-1242/28/1/015012

Long wavelength transverse magnetic polarized absorption in 1.3 m InAs/InGaAs dots-in-a-well type active regions

M. T. Crowley
, S. C. Heck
, S. B. Healy
, S. Osborne
, D. P. Williams
, S. Schulz
, E. P. O'Reilly

Research output: Contribution to journal › Article › peer-review

Abstract

Edge-photovoltage measurements of InAs/GaAs 1.3 m dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.

Original language	English
Article number	015012
Journal	Semiconductor Science and Technology
Volume	28
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/28/1/015012
Publication status	Published - Jan 2013

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abstract = "Edge-photovoltage measurements of InAs/GaAs 1.3 m dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.",

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AU - Crowley, M. T.

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AU - Healy, S. B.

AU - Osborne, S.

AU - Williams, D. P.

AU - Schulz, S.

AU - O'Reilly, E. P.

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N2 - Edge-photovoltage measurements of InAs/GaAs 1.3 m dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.

AB - Edge-photovoltage measurements of InAs/GaAs 1.3 m dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.

UR - https://www.scopus.com/pages/publications/84872065933

U2 - 10.1088/0268-1242/28/1/015012

DO - 10.1088/0268-1242/28/1/015012

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JO - Semiconductor Science and Technology

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Long wavelength transverse magnetic polarized absorption in 1.3 m InAs/InGaAs dots-in-a-well type active regions

Abstract

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