@article{106b798eefa641da8857ad0e4e9a68c2,
title = "Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes",
keywords = "Quantum dot, Diode, Recombination, Cladding (metalworking), Doping, Current density, Materials science, Gallium arsenide, Optoelectronics, Quantum well, Gallium, Diffusion, Carrier lifetime, Molecular physics, Chemistry, Optics, Physics, Silicon, Laser, Biochemistry, Quantum mechanics, Metallurgy, Gene, Thermodynamics",
author = "Brian Corbett",
year = "2011",
doi = "10.1063/1.3611387",
language = "English",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
}