@inproceedings{82adfaedd366449ba51cbc43eb32faf6,
title = "Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers",
abstract = "Porous GaN crystals have been grown on Pt- and Au- coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas in a CVD system, intermetallic metal-Ga alloys formed at the interface allow the seeding and growth of porous GaN by vapor-solid-solid processes. Current-voltage and capacitance-voltage measurements confirm that the intermetallic seed layers result in near-ohmic contacts to porous n-GaN with low contact resistivities.",
keywords = "Ohmic electron transport, Porous GaN",
author = "Bilousov, \{Oleksandr V.\} and Carvajal, \{Joan J.\} and Colm O'Dwyer and Xavier Mateos and Francesc D{\'i}az and Magdalena Aguil{\'o}",
year = "2013",
doi = "10.1117/12.2003949",
language = "English",
isbn = "9780819493941",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VIII",
note = "SPIE Symposium on Gallium Nitride Materials and Devices VIII ; Conference date: 04-02-2013 Through 07-02-2013",
}