Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers
- Oleksandr V. Bilousov
- , Joan J. Carvajal
- , Colm O'Dwyer
- , Xavier Mateos
- , Francesc Díaz
- , Magdalena Aguiló
- Universidad Rovira i Virgili
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review