Low-temperature electron mobility in trigate SOI MOSFETs

Jean Pierre Colinge; Aidan J. Quinn; Liam Floyd; Gareth Redmond; John C. Alderman; Weize Xiong; C. Rinn Cleavelin; Thomas Schulz; Klaus Schruefer; Gerhard Knoblinger; Paul Patruno

doi:10.1109/LED.2005.862691

Low-temperature electron mobility in trigate SOI MOSFETs

Jean Pierre Colinge
, Aidan J. Quinn
, Liam Floyd
, Gareth Redmond
, John C. Alderman
, Weize Xiong
, C. Rinn Cleavelin
, Thomas Schulz
, Klaus Schruefer
, Gerhard Knoblinger
, Paul Patruno

Research output: Contribution to journal › Article › peer-review

Abstract

Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I_D(V_G) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm²/Vs, is measured in the subbands at T = 4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.

Original language	English
Pages (from-to)	120-122
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LED.2005.862691
Publication status	Published - Feb 2006

Keywords

Charge carrier mobility
Cryogenic electronics
MOSFETs
Quantum wires
Semiconductor device measurements
Silicon-on-insulator (SOI) technology

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10.1109/LED.2005.862691

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title = "Low-temperature electron mobility in trigate SOI MOSFETs",

abstract = "Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the ID(VG) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm2/Vs, is measured in the subbands at T = 4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.",

keywords = "Charge carrier mobility, Cryogenic electronics, MOSFETs, Quantum wires, Semiconductor device measurements, Silicon-on-insulator (SOI) technology",

author = "Colinge, \{Jean Pierre\} and Quinn, \{Aidan J.\} and Liam Floyd and Gareth Redmond and Alderman, \{John C.\} and Weize Xiong and Cleavelin, \{C. Rinn\} and Thomas Schulz and Klaus Schruefer and Gerhard Knoblinger and Paul Patruno",

year = "2006",

month = feb,

doi = "10.1109/LED.2005.862691",

language = "English",

volume = "27",

pages = "120--122",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Low-temperature electron mobility in trigate SOI MOSFETs

AU - Colinge, Jean Pierre

AU - Quinn, Aidan J.

AU - Floyd, Liam

AU - Redmond, Gareth

AU - Alderman, John C.

AU - Xiong, Weize

AU - Cleavelin, C. Rinn

AU - Schulz, Thomas

AU - Schruefer, Klaus

AU - Knoblinger, Gerhard

AU - Patruno, Paul

PY - 2006/2

Y1 - 2006/2

N2 - Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the ID(VG) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm2/Vs, is measured in the subbands at T = 4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.

AB - Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the ID(VG) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm2/Vs, is measured in the subbands at T = 4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.

KW - Charge carrier mobility

KW - Cryogenic electronics

KW - MOSFETs

KW - Quantum wires

KW - Semiconductor device measurements

KW - Silicon-on-insulator (SOI) technology

UR - https://www.scopus.com/pages/publications/31544433411

U2 - 10.1109/LED.2005.862691

DO - 10.1109/LED.2005.862691

M3 - Article

AN - SCOPUS:31544433411

SN - 0741-3106

VL - 27

SP - 120

EP - 122

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Low-temperature electron mobility in trigate SOI MOSFETs

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