Abstract
Low temperature photoluminescence (PL), photoinduced current spectroscopy (PICTS) and thermoelectric effect spectroscopy (TEES) measurements have been carried out on several CdZnTe samples, taken from the same ingot, grown by the High Pressure Bridgman Technique. The PL bandgap edge luminescence allowed us to study the quality of the CdZnTe material. We have also determined the zinc segregation through the ingot. A broad luminescence band at lower energies was observed and correlated with PICTS results. The behavior of the defects through the ingot was studied by PICTS. Finally, these results are used to implement the resistivity model.
| Original language | English |
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| Pages (from-to) | 67-72 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 588 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' - Boston, MA, USA Duration: 29 Nov 1999 → 30 Nov 1999 |