Low-temperature RF plasma treatment effect on junctionless Pd-Al2O3-InGaAs MISFET operation

Y. V. Gomeniuk; Y. Y. Gomeniuk; P. N. Okholin; T. M. Nazarova; V. Djara; K. Cherkaoui; P. K. Hurley; A. N. Nazarov

doi:10.1149/08508.0137ecst

Low-temperature RF plasma treatment effect on junctionless Pd-Al₂O₃-InGaAs MISFET operation

Y. V. Gomeniuk
, Y. Y. Gomeniuk
, P. N. Okholin
, T. M. Nazarova
, V. Djara
, K. Cherkaoui
, P. K. Hurley
, A. N. Nazarov

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

The paper presents the results of a study focused on the effect of low-temperature RF plasma treatment on the operation of In_0.53Ga_0.47As channel MOSFETs fabricated using a junctionless design. Plasma annealing was found to substantially improve the source/drain contacts leading to a sharp increase of ON-state current of the transistors. The effect of RF plasma on threshold voltage and on the distribution of the density of interface states within the semiconductor bandgap is also reported.

Original language	English
Title of host publication	ECS Transactions
Editors	Joao Antonio Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B. Y. Nguyen, A. Yoshino
Publisher	Electrochemical Society Inc.
Pages	137-142
Number of pages	6
Edition	8
ISBN (Electronic)	9781607688365
ISBN (Print)	9781607688365
DOIs	https://doi.org/10.1149/08508.0137ecst
Publication status	Published - 2018
Event	Symposium on Advanced CMOS-Compatible Semiconductor Devices 18 - 233rd ECS Meeting - Seattle, United States Duration: 13 May 2018 → 17 May 2018

Publication series

Name	ECS Transactions
Number	8
Volume	85
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Advanced CMOS-Compatible Semiconductor Devices 18 - 233rd ECS Meeting
Country/Territory	United States
City	Seattle
Period	13/05/18 → 17/05/18

Access to Document

10.1149/08508.0137ecst

Cite this

Gomeniuk, Y. V., Gomeniuk, Y. Y., Okholin, P. N., Nazarova, T. M., Djara, V., Cherkaoui, K., Hurley, P. K., & Nazarov, A. N. (2018). Low-temperature RF plasma treatment effect on junctionless Pd-Al₂O₃-InGaAs MISFET operation. In J. A. Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B. Y. Nguyen, & A. Yoshino (Eds.), ECS Transactions (8 ed., pp. 137-142). (ECS Transactions; Vol. 85, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/08508.0137ecst

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title = "Low-temperature RF plasma treatment effect on junctionless Pd-Al2O3-InGaAs MISFET operation",

abstract = "The paper presents the results of a study focused on the effect of low-temperature RF plasma treatment on the operation of In0.53Ga0.47As channel MOSFETs fabricated using a junctionless design. Plasma annealing was found to substantially improve the source/drain contacts leading to a sharp increase of ON-state current of the transistors. The effect of RF plasma on threshold voltage and on the distribution of the density of interface states within the semiconductor bandgap is also reported.",

author = "Gomeniuk, \{Y. V.\} and Gomeniuk, \{Y. Y.\} and Okholin, \{P. N.\} and Nazarova, \{T. M.\} and V. Djara and K. Cherkaoui and Hurley, \{P. K.\} and Nazarov, \{A. N.\}",

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Gomeniuk, YV, Gomeniuk, YY, Okholin, PN, Nazarova, TM, Djara, V, Cherkaoui, K , Hurley, PK & Nazarov, AN 2018, Low-temperature RF plasma treatment effect on junctionless Pd-Al₂O₃-InGaAs MISFET operation. in JA Martino, JP Raskin, S Selberherr, H Ishii, F Gamiz, BY Nguyen & A Yoshino (eds), ECS Transactions. 8 edn, ECS Transactions, no. 8, vol. 85, Electrochemical Society Inc., pp. 137-142, Symposium on Advanced CMOS-Compatible Semiconductor Devices 18 - 233rd ECS Meeting, Seattle, United States, 13/05/18. https://doi.org/10.1149/08508.0137ecst

Low-temperature RF plasma treatment effect on junctionless Pd-Al₂O₃-InGaAs MISFET operation. / Gomeniuk, Y. V.; Gomeniuk, Y. Y.; Okholin, P. N. et al.
ECS Transactions. ed. / Joao Antonio Martino; J. P. Raskin; S. Selberherr; H. Ishii; F. Gamiz; B. Y. Nguyen; A. Yoshino. 8. ed. Electrochemical Society Inc., 2018. p. 137-142 (ECS Transactions; Vol. 85, No. 8).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

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AU - Gomeniuk, Y. V.

AU - Gomeniuk, Y. Y.

AU - Okholin, P. N.

AU - Nazarova, T. M.

AU - Djara, V.

AU - Cherkaoui, K.

AU - Hurley, P. K.

AU - Nazarov, A. N.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2018

Y1 - 2018

N2 - The paper presents the results of a study focused on the effect of low-temperature RF plasma treatment on the operation of In0.53Ga0.47As channel MOSFETs fabricated using a junctionless design. Plasma annealing was found to substantially improve the source/drain contacts leading to a sharp increase of ON-state current of the transistors. The effect of RF plasma on threshold voltage and on the distribution of the density of interface states within the semiconductor bandgap is also reported.

AB - The paper presents the results of a study focused on the effect of low-temperature RF plasma treatment on the operation of In0.53Ga0.47As channel MOSFETs fabricated using a junctionless design. Plasma annealing was found to substantially improve the source/drain contacts leading to a sharp increase of ON-state current of the transistors. The effect of RF plasma on threshold voltage and on the distribution of the density of interface states within the semiconductor bandgap is also reported.

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Gomeniuk YV, Gomeniuk YY, Okholin PN, Nazarova TM, Djara V, Cherkaoui K et al. Low-temperature RF plasma treatment effect on junctionless Pd-Al₂O₃-InGaAs MISFET operation. In Martino JA, Raskin JP, Selberherr S, Ishii H, Gamiz F, Nguyen BY, Yoshino A, editors, ECS Transactions. 8 ed. Electrochemical Society Inc. 2018. p. 137-142. (ECS Transactions; 8). doi: 10.1149/08508.0137ecst