@article{2826bd34c12e465793f4eacf553fd1c1,
title = "Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al2O3-Ingaas Misfet Operation",
keywords = "MISFET, Materials science, Ohmic contact, MOSFET, Doping, Optoelectronics, Electron mobility, Dielectric, Band gap, Analytical Chemistry (journal), Electrical engineering, Nanotechnology, Transistor, Field-effect transistor, Chemistry, Layer (electronics), Voltage, Engineering, Chromatography",
author = "Nazarov, \{Alexei N\} and Gomeniuk, \{Yuri V\} and Gomeniuk, \{Y. Y.\} and Okholin, \{Pavel N\} and Nazarova, \{Tamara M.\} and Vladimir Djara and Karim Cherkaoui and Paul Hurley",
year = "2018",
doi = "10.1149/ma2018-01/24/1464",
language = "English",
journal = "Meeting Abstracts",
issn = "1091-8213",
}